STGWA50M65DF2 STMicroelectronics

STGWA50M65DF2 Trench gate field-stop IGBT, M series 650 V, 50 A low-loss in a TO-247 long leads package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.65 V (typ.) I = 50 A CE(sat) C Tight parameters distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C Applications Motor control UPS Figure 1: Internal schematic diagram PFC C (2) General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series G (1) IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling Sc12850 no tab E (3) operation. Table 1: Device summary Order code Marking Package Packing STGWA50M65DF2 G50M65DF2 TO-247 long leads Tube May 2017 DocID028694 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STGWA50M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package mechanical data ............................................................. 13 4.1 Package information ....................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028694 Rev 3