X-On Electronics has gained recognition as a prominent supplier of STGWT20IH125DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWT20IH125DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWT20IH125DF STMicroelectronics

Name: STGWT20IH125DF
Brand: STMicroelectronics
SKU: STGWT20IH125DF_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGWT20IH125DF electronic component of STMicroelectronics

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Part No.	STGWT20IH125DF
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	STMicroelectronics IGBT Transistors 1250V 20A trench gte field-stop IGBT
Datasheet:	STGWT20IH125DF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

600: USD 1.56 ea
Line Total: USD 936

Availability - 0

MOQ: 600 Multiples: 300
Pack Size: 300

STGWT20IH125DF More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 600 Multiples : 300	600 : USD 1.56 1200 : USD 1.5113

0 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 1 Multiples : 1	1 : USD 3.6535 10 : USD 3.5562 30 : USD 3.4927 100 : USD 3.4278 500 : USD 3.4278

0 Ship by Fri. 07 Mar to Tue. 11 Mar MOQ : 1 Multiples : 1	1 : USD 9.0748 10 : USD 3.2689 25 : USD 3.0884

We are delighted to provide the STGWT20IH125DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWT20IH125DF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T = 175 C J Minimized tail current V = 2.0 V (typ.) I = 15 A CE(sat) C 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Very low V soft recovery co-packaged diode F TO-247 TO-3P Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Induction heating C (2, TAB) Microwave oven Resonant converters Description These IGBTs are developed using an advanced G (1) proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize E (3) efficiency for any resonant and soft-switching application. Table 1. Device summary Order code Marking Package Packaging STGW20IH125DF G20IH125DF TO-247 Tube STGWT20IH125DF G20IH125DF TO-3P Tube February 2014 DocID025269 Rev 2 1/17 This is information on a product in full production. www.st.com 17Contents STGW20IH125DF, STGWT20IH125DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID025269 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1.25 kV 1.25 kV
Collector-Emitter Saturation Voltage 2.55 V 2.55 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 40 A 40 A
Gate-Emitter Leakage Current 250 nA 250 nA
Package / Case TO - 3P TO - 3P
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 259 W 259 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series 900 - 1300V Igbts 900 - 1300V Igbts
Continuous Collector Current Ic Max 20 A 20 A
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 300 300
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000