X-On Electronics has gained recognition as a prominent supplier of STGWT28IH125DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWT28IH125DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWT28IH125DF STMicroelectronics

Name: STGWT28IH125DF
Brand: STMicroelectronics
SKU: STGWT28IH125DF_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGWT28IH125DF electronic component of STMicroelectronics

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Part No.	STGWT28IH125DF
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	STMicroelectronics IGBT Transistors 1250V 25A trench gte field-stop IGBT
Datasheet:	STGWT28IH125DF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

600: USD 2.9929 ea
Line Total: USD 1795.74

Availability - 0

MOQ: 600 Multiples: 600
Pack Size: 600

STGWT28IH125DF More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 27 Nov to Fri. 29 Nov MOQ : 600 Multiples : 600	600 : USD 2.9929

We are delighted to provide the STGWT28IH125DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWT28IH125DF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T = 175 C J Minimized tail current V = 2.0 V (typ.) I = 25 A CE(sat) C 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Low V soft recovery co-packaged diode F TO-247 TO-3P Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Induction heating C (2, TAB) Microwave oven Resonant converters Description These IGBTs are developed using an advanced G (1) proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching E (3) application. Table 1. Device summary Order code Marking Package Packaging STGW28IH125DF G28IH125DF TO-247 Tube STGWT28IH125DF G28IH125DF TO-3P Tube February 2014 DocID025268 Rev 2 1/17 This is information on a product in full production. www.st.com 17Contents STGW28IH125DF, STGWT28IH125DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID025268 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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ST2
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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1.25 kV 1.25 kV
Collector-Emitter Saturation Voltage 2.65 V 2.65 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 60 A 60 A
Gate-Emitter Leakage Current 250 nA 250 nA
Package / Case TO - 3P - 3 TO - 3P - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 375 W 375 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series 900 - 1300V Igbts 900 - 1300V Igbts
Continuous Collector Current Ic Max 30 A 30 A
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 300 300
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000