X-On Electronics has gained recognition as a prominent supplier of VS-GP300TD60S IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. VS-GP300TD60S IGBT Transistors are a product manufactured by Vishay. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

VS-GP300TD60S Vishay

VS-GP300TD60S electronic component of Vishay
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Part No.VS-GP300TD60S
Manufacturer: Vishay
Category: IGBT Transistors
Description: IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT
Datasheet: VS-GP300TD60S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 168.3025 ea
Line Total: USD 168.3 
Availability - 7
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 168.3025
12 : USD 155.756
24 : USD 150.098
60 : USD 145.5325
108 : USD 143.2785
252 : USD 140.7715
504 : USD 140.7485
1008 : USD 140.737
2508 : USD 140.6335

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-GP300TD60S from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-GP300TD60S and other electronic components in the IGBT Transistors category and beyond.

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VS-GP300TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 A Proprietary Vishay IGBT Silicon L Series FEATURES Trench PT IGBT technology Low V CE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al O DBC 2 3 UL approved file E78996 Dual INT-A-PAK Low Prole Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 600 V BENEFITS CES I DC at T = 104 C 300 A C C Increased operating efficiency V (typical) at 300 A, 25 C 1.30 V CE(on) Performance optimized as output inverter stage for TIG Speed DC to 1 kHz welding machines Package Dual INT-A-PAK low profile Direct mounting on heatsink Circuit configuration Half bridge Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 580 C (1) Continuous collector current I C T = 80 C 400 C Pulsed collector current I 800 CM A Clamped inductive load current I 800 LM T = 25 C 219 C Diode continuous forward current I F T = 80 C 145 C Gate to emitter voltage V 20 V GE T = 25 C 1136 C Maximum power dissipation (IGBT) P W D T = 80 C 636 C RMS isolation voltage V Any terminal to case (V t = 1 s, T = 25 C) 3500 V ISOL RMS J Operating junction and storage temperature range T , T -40 to +150 C J Stg Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Revision: 11-Dec-17 Document Number: 95767 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GP300TD60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 500 A 600 - - BR(CES) GE C V = 15 V, I = 150 A - 1.12 1.21 GE C V = 15 V, I = 300 A - 1.30 1.45 GE C Collector to emitter voltage V CE(on) V = 15 V, I = 150 A, T = 125 C - 1.03 - V GE C J V = 15 V, I = 300 A, T = 125 C - 1.26 - GE C J V = V , I = 6.4 mA 4.9 6.0 8.8 CE GE C Gate threshold voltage V GE(th) V = V , I = 6.4 mA, T = 125 C - 3.4 - CE GE C J Temperature coefficient of threshold voltage V / TV = V , I = 6.4 mA, (25 C to 125 C) - -26 - mV/C GE(th) CE GE C Forward transconductance g V = 20 V, I = 50 A - 67 - S fe CE C Transfer characteristics V V = 20 V, I = 300 A - 11.4 - V GE CE C V = 0 V, V = 600 V - 4.0 150 GE CE Collector to emitter leakage current I A CES V = 0 V, V = 600 V, T = 125 C - 100 - GE CE J I = 150 A - 1.31 1.41 FM I = 300 A - 1.56 1.75 FM Diode forward voltage drop V V FM I = 150 A, T = 125 C - 1.28 - FM J I = 300 A, T = 125 C - 1.63 - FM J Gate to emitter leakage current I V = 20 V - - 500 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching energy E -6.0 - on Turn-off switching energy E -33 - mJ off Total switching energy E -39 - tot I = 300 A, V = 300 V, V = 15 V, C CC GE Turn-on delay time t -503 - d(on) R = 1.5 , L = 500 H, T = 25 C g J Rise time t -214 - r ns Turn-off delay time t -600 - d(off) Fall time t -547 - f Turn-on switching loss E -7.2 - on Turn-off switching loss E - 55.2 - mJ off Total switching loss E - 62.4 - tot I = 300 A, V = 300 V, V = 15 V, C CC GE Turn-on delay time t -476 - d(on) R = 1.5 , L = 500 H, T = 125 C g J Rise time t -209 - r ns Turn-off delay time t -807 - d(off) Fall time t -918 - f T = 150 C, I = 800 A, V = 300 V J C CC Reverse bias safe operating area RBSOA V = 600 V, R = 1.5 V = 15 V to 0 V, Fullsquare P g GE L = 500 H Diode reverse recovery time t -119 - ns rr I = 300 A, R = 1.5 , F g Diode peak reverse current I -99 - A rr V = 300 V, T = 25 C CC J Diode recovery charge Q -7.3 - C rr Diode reverse recovery time t -165 - ns rr I = 300 A, R = 1.5 , F g Diode peak reverse current I -127 - A rr V = 300 V, T = 125 C CC J Diode recovery charge Q -13 - C rr Revision: 11-Dec-17 Document Number: 95767 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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