VS-GP300TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 A Proprietary Vishay IGBT Silicon L Series FEATURES Trench PT IGBT technology Low V CE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al O DBC 2 3 UL approved file E78996 Dual INT-A-PAK Low Prole Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 600 V BENEFITS CES I DC at T = 104 C 300 A C C Increased operating efficiency V (typical) at 300 A, 25 C 1.30 V CE(on) Performance optimized as output inverter stage for TIG Speed DC to 1 kHz welding machines Package Dual INT-A-PAK low profile Direct mounting on heatsink Circuit configuration Half bridge Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 580 C (1) Continuous collector current I C T = 80 C 400 C Pulsed collector current I 800 CM A Clamped inductive load current I 800 LM T = 25 C 219 C Diode continuous forward current I F T = 80 C 145 C Gate to emitter voltage V 20 V GE T = 25 C 1136 C Maximum power dissipation (IGBT) P W D T = 80 C 636 C RMS isolation voltage V Any terminal to case (V t = 1 s, T = 25 C) 3500 V ISOL RMS J Operating junction and storage temperature range T , T -40 to +150 C J Stg Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Revision: 11-Dec-17 Document Number: 95767 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-GP300TD60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 500 A 600 - - BR(CES) GE C V = 15 V, I = 150 A - 1.12 1.21 GE C V = 15 V, I = 300 A - 1.30 1.45 GE C Collector to emitter voltage V CE(on) V = 15 V, I = 150 A, T = 125 C - 1.03 - V GE C J V = 15 V, I = 300 A, T = 125 C - 1.26 - GE C J V = V , I = 6.4 mA 4.9 6.0 8.8 CE GE C Gate threshold voltage V GE(th) V = V , I = 6.4 mA, T = 125 C - 3.4 - CE GE C J Temperature coefficient of threshold voltage V / TV = V , I = 6.4 mA, (25 C to 125 C) - -26 - mV/C GE(th) CE GE C Forward transconductance g V = 20 V, I = 50 A - 67 - S fe CE C Transfer characteristics V V = 20 V, I = 300 A - 11.4 - V GE CE C V = 0 V, V = 600 V - 4.0 150 GE CE Collector to emitter leakage current I A CES V = 0 V, V = 600 V, T = 125 C - 100 - GE CE J I = 150 A - 1.31 1.41 FM I = 300 A - 1.56 1.75 FM Diode forward voltage drop V V FM I = 150 A, T = 125 C - 1.28 - FM J I = 300 A, T = 125 C - 1.63 - FM J Gate to emitter leakage current I V = 20 V - - 500 nA GES GE SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching energy E -6.0 - on Turn-off switching energy E -33 - mJ off Total switching energy E -39 - tot I = 300 A, V = 300 V, V = 15 V, C CC GE Turn-on delay time t -503 - d(on) R = 1.5 , L = 500 H, T = 25 C g J Rise time t -214 - r ns Turn-off delay time t -600 - d(off) Fall time t -547 - f Turn-on switching loss E -7.2 - on Turn-off switching loss E - 55.2 - mJ off Total switching loss E - 62.4 - tot I = 300 A, V = 300 V, V = 15 V, C CC GE Turn-on delay time t -476 - d(on) R = 1.5 , L = 500 H, T = 125 C g J Rise time t -209 - r ns Turn-off delay time t -807 - d(off) Fall time t -918 - f T = 150 C, I = 800 A, V = 300 V J C CC Reverse bias safe operating area RBSOA V = 600 V, R = 1.5 V = 15 V to 0 V, Fullsquare P g GE L = 500 H Diode reverse recovery time t -119 - ns rr I = 300 A, R = 1.5 , F g Diode peak reverse current I -99 - A rr V = 300 V, T = 25 C CC J Diode recovery charge Q -7.3 - C rr Diode reverse recovery time t -165 - ns rr I = 300 A, R = 1.5 , F g Diode peak reverse current I -127 - A rr V = 300 V, T = 125 C CC J Diode recovery charge Q -13 - C rr Revision: 11-Dec-17 Document Number: 95767 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000