C C = E C G G D-Pak 2 E D -Pak = IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GC E Gate Collector Emitter Appliance Drives Inverters UPS Features Benefits Low V and switching losses CE(ON) High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher Square RBSOA and maximum junction temperature 175C power capability Positive V temperature coefficient and tighter distribution of CE(ON) Excellent current sharing in parallel operation parameters 5 s short circuit SOA Enables short circuit protection scheme Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity Tube 75 IRGR4610DPbF Tape and Reel 2000 IRGR4610DTRPbF IRGR4610DPbF D-PAK Tape and Reel Right 3000 IRGR4610DTRRPbF Tape and Reel Left 3000 IRGR4610DTRLPbF Tube 50 IRGS4610DPbF 2 IRGS4610DPbF D PAK Tape and Reel Right 800 IRGS4610DTRRPbF Tape and Reel Left 800 IRGS4610DTRLPbF IRGB4610DPbF TO-220AB Tube 50 IRGB4610DPbF Absolute Maximum Ratings Parameter Max. Units 600 V Collector-to-Emitter Breakdown Voltage V CES 16 I T = 25C Continuous Collector Current C C I T = 100C Continuous Collector Current 10 C C I Pulsed Collector Current, V = 15V 18 CM GE I Clamped Inductive Load Current, V = 20V 24 A LM GE 10 I T = 25C Diode Continuous Forward Current F C I T =100C Diode Continuous Forward Current 6 F C Diode Maximum Forward Current I 24 FM 20 Continuous Gate-to-Emitter Voltage V V GE 30 Transient Gate-to-Emitter Voltage 77 P T =25 Maximum Power Dissipation W D C P T =100 Maximum Power Dissipation 39 D C T Operating Junction and J -40 to + 175 C T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbf. In (1.1 N.m) Mounting Torque, 6-32 or M3 Screw TO-220 % ( ) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance, Junction-to-Case -(IGBT) R 1.9 JC Thermal Resistance, Junction-to-Case -(Diode) R 6.3 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220) 0.5 CS Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK) 50 C/W Thermal Resistance, Junction-to-Ambient (D-PAK) 110 R JA Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State) 40 2 (D PAK) Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220) 62 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I =100 A (BR)CES GE c o V / T Temperature Coeff. of Breakdown Voltage 0.36 V/C (BR)CES J V = 0V, I = 250 A ( 25 -175 C ) GE c 1.7 2.0 I = 6.0A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.07 V I = 6.0A, V = 15V, T = 150C CE(on) C GE J 2.14 I = 6.0A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 150A GE(th) CE GE C o V / TJ Threshold Voltage temp. coefficient mV/C GE(th) -13 V = V , I = 250A ( 25 -175 C ) CE GE C gfe Forward Transconductance 5.8 S V = 25V, I = 6.0A, PW =80S CE C I 25 AV = 0V,V = 600V CES GE CE Collector-to-Emitter Leakage Current V = 0V, V = 600V, T =175C 250 GE CE J V 1.60 2.30 V I = 6.0A FM F Diode Forward Voltage Drop 1.30 I = 6.0A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20 V GES GE Notes: V = 80% (V ), V = 20V, L = 1.0mH, R = 100. CC CES GE G R is measured at T approximately 90C J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: