IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C V = 600V Low V Trench IGBT Technology CES CE (ON) Low switching losses I = 24A, T = 100C Maximum Junction temperature 175 C C C 5 S short circuit SOA G Square RBSOA t 5s, T = 175C SC J(max) 100% of the parts tested for 4X rated current (I ) LM Positive V Temperature co-efficient E V typ. = 1.65V CE (ON) CE(on) Ultra fast soft Recovery Co-Pak Diode n-channel Tight parameter distribution Lead Free Package C C Benefits High Efficiency in a wide range of applications E E C Suitable for a wide range of switching frequencies due to G G Low V and Low Switching losses CE (ON) 2 D Pak TO-262 Rugged transient Performance for increased reliability IRGS4062DPbF IRGSL4062DPbF Excellent Current sharing in parallel operation Low EMI GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 48 C C Continuous Collector Current 24 I T = 100C C C I Pulse Collector Current 96 CM I Clamped Inductive Load Current 96 A LM I T = 25C Diode Continous Forward Current 48 F C I T = 100C Diode Continous Forward Current 24 F C Diode Maximum Forward Current 96 I FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 Maximum Power Dissipation 250 W P T = 25C D C P T = 100C Maximum Power Dissipation 125 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.60 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.53 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 80 JA 1 www.irf.com 12/07/09IRGS/SL4062DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A CT6 (BR)CES GE C V /T V = 0V, I = 1mA (25C-175C) CT6 (BR)CES J Temperature Coeff. of Breakdown Voltage 0.30 V/C GE C 1.60 1.95 I = 24A, V = 15V, T = 25C 5,6,7 C GE J V Collector-to-Emitter Saturation Voltage 2.03 V I = 24A, V = 15V, T = 150C 9,10,11 CE(on) C GE J I = 24A, V = 15V, T = 175C 2.04 C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 700A 9, 10, GE(th) CE GE C V /TJ Threshold Voltage temp. coefficient -18 mV/C V = V , I = 1.0mA (25C - 175C) 11, 12 GE(th) CE GE C = 50V, I = 24A, PW = 80s gfe Forward Transconductance 17 S V CE C I Collector-to-Emitter Leakage Current 2.0 25 A V = 0V, V = 600V CES GE CE 775 V = 0V, V = 600V, T = 175C GE CE J V I = 24A Diode Forward Voltage Drop 1.80 2.6 V 8 FM F 1.28 I = 24A, T = 175C F J I V = 20V Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Q Total Gate Charge (turn-on) 50 75 I = 24A 24 g C Q Gate-to-Emitter Charge (turn-on) 13 20 nC V = 15V CT1 ge GE Q V = 400V Gate-to-Collector Charge (turn-on) 21 31 gc CC E Turn-On Switching Loss 115 201 I = 24A, V = 400V, V = 15V CT4 on C CC GE E R = 10, L = 200H, L = 150nH, T = 25C off Turn-Off Switching Loss 600 700 J G S J E Total Switching Loss 715 901 Energy losses include tail & diode reverse recovery total t Turn-On delay time 41 53 I = 24A, V = 400V, V = 15V CT4 d(on) C CC GE t R = 10, L = 200H, L = 150nH, T = 25C Rise time 22 31 ns r G S J t Turn-Off delay time 104 115 d(off) t Fall time 29 41 f E I = 24A, V = 400V, V =15V 13, 15 Turn-On Switching Loss 420 on C CC GE E Turn-Off Switching Loss 840 J R =10, L=100H, L =150nH, T = 175C CT4 off G S J E Total Switching Loss 1260 Energy losses include tail & diode reverse recovery WF1, WF2 total t I = 24A, V = 400V, V = 15V Turn-On delay time 40 14, 16 d(on) C CC GE t Rise time 24 ns R = 10, L = 200H, L = 150nH CT4 r G S t T = 175C WF1 Turn-Off delay time 125 d(off) J t Fall time 39 WF2 f C Input Capacitance 1490 pF V = 0V 23 ies GE C V = 30V Output Capacitance 129 oes CC C Reverse Transfer Capacitance 45 f = 1.0Mhz res T = 175C, I = 96A 4 J C V = 480V, Vp =600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE CT2 CC Rg = 10, V = +15V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp =600V 22, CT3 CC Rg = 10, V = +15V to 0V WF4 GE Erec Reverse Recovery Energy of the Diode 621 J T = 175C 17, 18, 19 J t V = 400V, I = 24A 20, 21 Diode Reverse Recovery Time 89 ns rr CC F I Peak Reverse Recovery Current 37 A V = 15V, Rg = 10 , L =200H, L = 150nH WF3 rr GE s Notes: V = 80% (V ), V = 20V, L = 100H, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES 2 www.irf.com