VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 A Proprietary Vishay IGBT Silicon L Series FEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al O DBC 2 3 UL pending Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 INT-A-PAK BENEFITS PRIMARY CHARACTERISTICS Optimized for high current inverter stages (AC TIG welding V 600 V CES machines) I DC, T = 130 C 100 A C C Direct mounting to heatsink V at 100 A, 25 C 1.16 V CE(on) Very low junction to case thermal resistance Speed DC to 1 kHz Low EMI Package INT-A-PAK Circuit configuration Half bridge ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 337 C Continuous collector current I C T = 80 C 235 C A Pulsed collector current I 440 CM Peak switching current I 440 LM Gate to emitter voltage V 20 GE V RMS isolation voltage V Any terminal to case, t = 1 min 2500 ISOL T = 25 C 781 C Maximum power dissipation P W D T = 100 C 312 C Operating junction temperature range T -40 to +150 J C Storage temperature range T -40 to +125 Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 500 A 600 - - BR(CES) GE C V = 15 V, I = 100 A - 1.16 1.34 GE C Collector to emitter voltage V V = 15 V, I = 200 A - 1.37 - V CE(on) GE C V = 15 V, I = 100 A, T = 125 C - 1.08 - GE C J Gate threshold voltage V V = V , I = 3.2 mA 4.9 5.8 8.8 GE(th) CE GE C Temperature coefficient of threshold voltage V /T V = V , I = 3.2 mA, (25 C to 125 C) - -27 - mV/C GE(th) J CE GE C Forward transconductance g V = 20 V, I = 50 A - 93 - S fe CE C Transfer characteristics V V = 20 V, I = 100 A - 10.2 - V GE CE C V = 0 V, V = 600 V - 1.0 150 GE CE Collector to emitter leakage current I A CES V = 0 V, V = 600 V, T = 125 C - 300 - GE CE J I = 100 A, V = 0 V - 1.36 1.96 C GE Diode forward voltage drop V V FM I = 100 A, V = 0 V, T = 125 C - 1.17 - C GE J Gate to emitter leakage current I V = 20 V - - 500 nA GES GE Revision: 09-Nov-2020 Document Number: 95721 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Q -942 - g I = 100 A, C Gate to emitter charge Q -295 - nC ge V = 400 V CC Gate to collector charge Q -802 - gc Turn-on switching energy E -1.0 - on Turn-off switching energy E -7.9 - mJ off I = 100 A, C Total switching energy E -8.9 - ts V = 300 V, CC Turn-on delay time t -242 - V = 15 V, L = 500 H d(on) GE R = 3.3 , g Rise time t -66 - r T = 25 C ns J Turn-off delay time t -453 - d(off) Fall time t -460 - f Turn-on switching energy E -2.0 - on Turn-off switching energy E - 15.3 - mJ off I = 100 A, C Total switching energy E - 17.3 - ts V = 300 V, CC Turn-on delay time t V = 15 V, L = 500 H -257 - d(on) GE R = 3.3 , g Rise time t -68 - r T = 125 C ns J Turn-off delay time t -716 - d(off) Fall time t -868 - f T = 150C, I = 440 A, V = 300 V, J C CC Reverse bias safe operating area RBSOA V = 600 V, R = 3.3 , Fullsquare p g V = 15 V to 0 V, L = 500 H GE Diode reverse recovery time t -115 - ns rr I = 50 A, F Diode peak reverse current I dI /dt = 200 A/s, -11 - A rr F V = 200 V rr Diode recovery charge Q -638 - nC rr Diode reverse recovery time t -210 - ns rr I = 50 A, F Diode peak reverse current I dI /dt = 200 A/s, - 21.4 - A rr F V = 200 V, T = 125 C rr J Diode recovery charge Q -2251 - nC rr THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction temperature range T -40 - 150 J C Storage temperature range T -40 - 125 Stg per switch - - 0.16 Junction to case R thJC per diode - - 0.48 C/W Case to sink per module R -0.1 - thCS A mounting compound is to heatsink Mounting torque recommended and the torque should 4 to 6 Nm 10 % be rechecked after a period of 3 hours busbar to allow the spread of the compound Weight - 185 - g Revision: 09-Nov-2020 Document Number: 95721 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000