IRGS4620DPBF Infineon

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 600V CES C C C I = 20A, T =100C C C t 5s, T = 175C E SC J(max) C E E C G G C G V typ. = 1.55V IC = 12A CE(ON) IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB C C Applications Industrial Motor Drive Inverters E E C UPS C G G G Welding IRGS4620DPbF E IRGIB4620DPbF 2 D Pak TO-220AB Full-Pak n-channel G C E Gate Collector Emitter Features Benefits High efficiency in a wide range of applications and switching Low V and switching losses CE(ON) frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and high power capability Positive V temperature coefficient Excellent current sharing in parallel operation CE (ON) 5s Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGB4620DPbF TO-220AB Tube 50 IRGB4620DPbF IRGIB4620DPbF TO-220AB Full-Pak Tube 50 IRGIB4620DPbF IRGP4620DPbF TO-247AC Tube 25 IRGP4620DPbF IRGP4620D-EPbF TO-247AD Tube 25 IRGP4620D-EPbF Tube 50 IRGS4620DPbF 2 IRGS4620DPbF D Pak Tape and Reel Right 800 IRGS4620DTRRPbF Tape and Reel Left 800 IRGS4620DTRLPbF 1 2015-11-23 IRGB/IB/P/SP4620D/EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 32 C C I T = 100C Continuous Collector Current 20 C C A I Pulse Collector Current, V = 15V 36 CM GE I Clamped Inductive Load Current, V = 20V 48 LM GE I T = 25C Diode Continuous Forward Current 16 F C I T = 100C Diode Continuous Forward Current 10 F C I Diode Maximum Forward Current 48 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate to Emitter Voltage 30 P T = 25C Maximum Power Dissipation 140 D C W P T = 100C Maximum Power Dissipation 70 D C T Operating Junction and -40 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units 2 1.07 Thermal Resistance Junction-to-Case (D Pak, TO-220) R (IGBT) Thermal Resistance Junction-to-Case (TO-220 Full-Pak) 3.75 JC Thermal Resistance Junction-to-Case (TO-247) 1.12 2 Thermal Resistance Junction-to-Case (D Pak, TO-220) 3.66 R (Diode) Thermal Resistance Junction-to-Case (TO-220 Full-Pak) 6.22 JC Thermal Resistance Junction-to-Case (TO-247) 3.71 2 Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D Pak, R C/W CS 0.50 TO-220 Full-Pak ) Thermal Resistance Case-to-Sink (TO-247) 0.24 2 Thermal Resistance, Junction-to-Ambient (PCB Mount - D Pak) 40 R JA Thermal Resistance, Junction-to-Ambient (Socket Mount TO-247) 40 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-220) 62 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-220 Full-Pak) 65 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.40 V/C V = 0V, I = 1mA (25C-175C) V /T GE C (BR)CES J 1.55 1.85 I = 12A, V = 15V, T = 25C C GE J 1.90 V I = 12A, V = 15V, T = 150C V Collector-to-Emitter Saturation Voltage CE(on) C GE J 1.97 I = 12A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 350A GE(th) CE GE C Threshold Voltage Temp. Coefficient -18 mV/C V = V , I = 1.0mA (25C-175C) V /T CE GE C GE(th) J gfe Forward Transconductance 7.7 S V = 50V, I = 12A, PW = 80s CE C 2.0 A V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current CES 475 V = 0V, V = 600V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE 2.1 3.1 V I = 12A F V Diode Forward Voltage Drop FM 1.6 I = 12A, T = 175C F J 2 2015-11-23