STGWT40H60DLFB STMicroelectronics

STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current Low saturation voltage: V = 1.6 V (typ.) CE(sat) I = 40 A C 3 2 3 Tight parameters distribution 1 2 Safe paralleling 1 Low thermal resistance TO-247 TO-3P Low V soft recovery co-packaged diode F Lead free package Figure 1. Internal schematic diagram Applications C (2 or TAB) Induction heating Microwave oven Resonant converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching E (3) losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V temperature coefficient and very CE(sat) tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW40H60DLFB GW40H60DLFB TO-247 Tube STGWT40H60DLFB GWT40H60DLFB TO-3P Tube March 2014 DocID024370 Rev 4 1/17 This is information on a product in full production. www.st.com 17Contents STGW40H60DLFB, STGWT40H60DLFB Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 11 4 Package mechanical data 12 4.1 TO-247, STGW40H60DLFB . 12 4.2 TO-3P, STGWT40H60DLFB 14 5 Revision history . 16 2/17 DocID024370 Rev 4