STGWT40V60DF STMicroelectronics

STGFW40V60DF, STGW40V60DF, STGWT40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Features Maximum junction temperature: T = 175 C J 111 Tail-less switching off 3 2 V = 1.8 V (typ.) I = 40 A 1 CE(sat) C TO-3PF TAB Tight parameters distribution Safe paralleling 3 Low thermal resistance 3 2 2 1 1 Very fast soft recovery antiparallel diode TO-247 TO-3P C(2, TAB) Applications Welding G(1) Power factor correction UPS Solar inverters Chargers E(3) NG1E3C2T Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW40V60DF STGW40V60DF STGWT40V60DF DS9556 - Rev 11 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW40V60DF, STGW40V60DF, STGWT40V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247, TO-3P TO-3PF V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 80 A C I C Continuous collector current at T = 100 C 40 A C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 80 A C I F Continuous forward current at T = 100 C 40 A C (1) I Pulsed forward current 160 A FP P Total power dissipation at T = 25 C 283 98.5 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s T = 25 C) C T Storage temperature range -55 to 150 C stg T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-3P TO-3PF R Thermal resistance, junction-to-case IGBT C/W thJC 0.53 1.52 R Thermal resistance, junction-to-case diode 1.14 1.95 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9556 - Rev 11 page 2/21