X-On Electronics has gained recognition as a prominent supplier of STGW50H60DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGW50H60DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGW50H60DF STMicroelectronics

STGW50H60DF electronic component of STMicroelectronics
STGW50H60DF STMicroelectronics
STGW50H60DF IGBT Transistors
STGW50H60DF  Semiconductors

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See Product Specifications
Part No. STGW50H60DF
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: STMicroelectronics IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
Datasheet: STGW50H60DF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5
Multiples : 1
5 : USD 3.6365
50 : USD 3.2287
250 : USD 2.7981
N/A

Obsolete
0
MOQ : 56
Multiples : 1
56 : USD 1.8417
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.442
10 : USD 3.7777
25 : USD 3.7106
100 : USD 3.2745
250 : USD 3.1067
500 : USD 2.7645
1000 : USD 2.3351
2500 : USD 2.1539
5000 : USD 2.0398
N/A

Obsolete
0
MOQ : 4
Multiples : 1
4 : USD 4.1057
10 : USD 3.7431
25 : USD 3.5091
50 : USD 3.4389
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the STGW50H60DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGW50H60DF and other electronic components in the IGBT Transistors category and beyond.

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STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Datasheet production data Features High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 2 Ultrafast soft recovery antiparallel diode 1 Lead free package TO-247 Applications Photovoltaic inverters Uninterruptible power supply Figure 1. Internal schematic diagram Welding Power factor correction High switching frequency converters Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive V temperature coefficient CE(sat) and a very tight parameter distribution result in an easier paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW50H60DF GW50H60DF TO-247 Tube July 2012 Doc ID 018673 Rev 5 1/12 This is information on a product in full production. www.st.com 12 Obsolete Product(s) - Obsolete Product(s)Electrical ratings STGW50H60DF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 600 V CES GE I Continuous collector current at T = 25 C 100 A C C I Continuous collector current at T = 100 C 50 A C C (1) I Pulsed collector current 200 A CP V Gate-emitter voltage 20 V GE I Diode RMS forward current at T = 25 C 30 A F C Surge not repetitive forward current t = 10 ms p I 120 A FSM sinusoidal P Total dissipation at T = 25 C 360 W TOT C Short-circuit withstand time at V = 400 V, CC t 6s SC V = 15 V GE T Storage temperature range STG - 55 to 150 C T Operating junction temperature J 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.35 C/W thJC R Thermal resistance junction-case diode 1.5 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA 2/12 Doc ID 018673 Rev 5 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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