X-On Electronics has gained recognition as a prominent supplier of STGW60H65DRF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGW60H65DRF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGW60H65DRF STMicroelectronics

STGW60H65DRF electronic component of STMicroelectronics
STGW60H65DRF STMicroelectronics
STGW60H65DRF IGBT Transistors
STGW60H65DRF  Semiconductors

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See Product Specifications
Part No. STGW60H65DRF
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Datasheet: STGW60H65DRF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
51: USD 2.311 ea
Line Total: USD 117.86 
Availability - 0
MOQ: 51  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 600
Multiples : 1
600 : USD 4.2798
1000 : USD 4.2358
2000 : USD 4.1944
2500 : USD 4.1517
3000 : USD 4.1102
4000 : USD 4.0699
5000 : USD 4.0284
10000 : USD 3.9882
20000 : USD 3.9491
50000 : USD 3.9089

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 600
Multiples : 600
600 : USD 2.5893
1200 : USD 2.5893
1800 : USD 2.5893

0
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 51
Multiples : 1
51 : USD 2.311

0
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 6.4113
10 : USD 4.2015
25 : USD 4.0109
100 : USD 3.5396
600 : USD 3.1085

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Series
Brand
Factory Pack Quantity :
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Hts Code
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We are delighted to provide the STGW60H65DRF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGW60H65DRF and other electronic components in the IGBT Transistors category and beyond.

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STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Datasheet - production data Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters 3 2 1 Description TO-247 This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise Figure 1. Internal schematic diagram between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very CE(sat) tight parameter distribution result in easier paralleling operation. Features Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time Ultrafast soft recovery antiparallel diode Table 1. Device summary Order code Marking Package Packaging STGW60H65DRF GW60H65DRF TO-247 Tube April 2013 DocID022346 Rev 6 1/13 This is information on a product in full production. www.st.com 13Electrical ratings STGW60H65DRF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE I Continuous collector current at T = 25 C 120 A C C I Continuous collector current at T = 100 C 60 A C C (1) I Pulsed collector current 240 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 120 C I A F Continuous forward current at T = 100 C 60 C (1) I Pulsed forward current 240 A FP P Total dissipation at T = 25 C 420 W TOT C Short-circuit withstand time at V = 400 V, CC t 6s SC V = 15 V GE T Storage temperature range STG - 55 to 175 C T Operating junction temperature J 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.35 C/W thJC R Thermal resistance junction-case diode 1.38 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA 2/13 DocID022346 Rev 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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