STGW40M120DF3 STMicroelectronics

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features 10 s of short-circuit withstand time V = 1.85 V (typ.) I = 40 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode Applications 2 7 Industrial drives 2 ORQJ OHDGV 7 UPS Solar Figure 1.Internal schematic diagram Welding % 7 & RU Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise * in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packaging STGW40M120DF3 G40M120DF3 TO-247 Tube STGWA40M120DF3 G40M120DF3 TO-247 long leads Tube November 2014 DocID026224 Rev 3 1/18 This is information on a product in full production. www.st.com 18Contents STGW40M120DF3, STGWA40M120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 12 4 Package mechanical data 13 4.1 TO-247, STGW40M120DF3 . 13 4.2 TO-247 long leads, STGWA40M120DF3 . 15 5 Revision history . 17 2/18 DocID026224 Rev 3