STGW35HF60WD 35 A, 600 V ultra fast IGBT Features Improved E at elevated temperature off Minimal tail current Low conduction losses V classified for easy parallel connection CE(sat) Ultra fast soft recovery antiparallel diode 3 2 1 Applications TO-247 Welding High frequency converters Power factor correction Description Figure 1. Internal schematic diagram The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (E ) versus temperature, as well as lower off conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). Table 1. Device summary (1) Order code Marking Package Packaging GW35HF60WDA STGW35HF60WD GW35HF60WDB TO-247 Tube GW35HF60WDC 1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification. STMicroelectronics reserves the right to ship from any group according to production availability. May 2010 Doc ID 15592 Rev 5 1/12 www.st.com 12 Electrical ratings STGW35HF60WD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 600 V CES GE (1) I Continuous collector current at T = 25 C 60 A C C (1) I Continuous collector current at T = 100 C 35 A C C (2) I Pulsed collector current 150 A CP (3) I Turn-off latching current 80 A CL V Gate-emitter voltage 20 V GE I Diode RMS forward current at T = 25 C 30 A F C I Surge non repetitive forward current t = 10 ms sinusoidal 120 A FSM p P Total dissipation at T = 25 C 200 W TOT C T Storage temperature stg 55 to 150 C T Operating junction temperature j 1. Calculated according to the iterative formula: T T jm()ax C I()T = ------------------------------------------------------------------------------------------------------- C C R V ()T , I()T thj c CE()sat()max jm()ax C C 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. V = 80% (V ), V = 15 V, R = 10 , T = 150 C CLAMP CES GE G J Table 3. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.63 C/W R thj-case Thermal resistance junction-case diode 1.5 C/W R Thermal resistance junction-ambient 50 C/W thj-amb 2/12 Doc ID 15592 Rev 5