STGW35NB60SD STMicroelectronics

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH IGBT General features V I CE(sat) C Type V CES (Max) 25C 100C STGW35NB60SD 600V < 1.7V 35A LOW ON-VOLTAGE DROP (V ) CEsat 3 2 LOW INPUT CAPACITANCE 1 HIGH CURRENT CAPABILITY TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Internal schematic diagram designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. Applications LIGHT DIMMER HID WELDING MOTOR CONTROL STATIC RELAYS Order codes Sales Type Marking Package Packaging STGW35NB60SD GW35NB60SD TO-247 TUBE Rev 1 November 2005 1/13 www.st.com 131 Electrical ratings STGW35NB60SD 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 600 V CES GS I Note 4 Collector Current (continuous) at 25C 70 A C I Note 4 Collector Current (continuous) at 100C 35 A C I Note 1 Collector Current (pulsed) 250 A CM V Gate-Emitter Voltage 20 V GE I Diode RMS Forward Current at T = 25C 30 A f C P Total Dissipation at T = 25C 200 W TOT C T Operating Junction Temperature j 55 to 150 C T Storage Temperature stg Maximum Lead Temperature for Soldering T 300 C L Purpose (1.6mm from case, for 10sec.) Table 2. Thermal resistance Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case (IGBT) -- -- 0.625 C/W Rthj-case Thermal Resistance Junction-case (DIODE) -- -- 1.5 C/W Rthj-amb Thermal Resistance Junction-ambient -- -- 50 C/W 2/13