X-On Electronics has gained recognition as a prominent supplier of STGW35NB60SD IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGW35NB60SD IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGW35NB60SD STMicroelectronics

Name: STGW35NB60SD
Brand: STMicroelectronics
SKU: STGW35NB60SD_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGW35NB60SD electronic component of STMicroelectronics

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See Product Specifications

Part No.	STGW35NB60SD
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	Transistor: IGBT; 600V; 35A; 200W; TO247-3
Datasheet:	STGW35NB60SD Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

600: USD 4.2025 ea
Line Total: USD 2521.5

Availability - 0

MOQ: 600 Multiples: 30
Pack Size: 30

STGW35NB60SD More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 600 Multiples : 1	600 : USD 3.2215

0 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 8.4519 10 : USD 5.5251

0 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 5.8822 3 : USD 5.0865 4 : USD 3.7045 10 : USD 3.5118

0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 600 Multiples : 30	600 : USD 4.2025 1200 : USD 4.0437 3000 : USD 3.9767

Specifications

Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
Power Dissipation 200 W 200 W
Case To247 - 3 To247 - 3
Mounting Tht Tht
Kind Of Package TUBE TUBE
Type Of Transistor Igbt Igbt
Pulsed Collector Current 250 A 250 A
Collector-Emitter Voltage 600 V 600 V
Collector Current 35 A 35 A
Gate-Emitter Voltage 20 V 20 V
Gate Charge 115 nC 115 nC

We are delighted to provide the STGW35NB60SD from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGW35NB60SD and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH IGBT General features V I CE(sat) C Type V CES (Max) 25C 100C STGW35NB60SD 600V < 1.7V 35A LOW ON-VOLTAGE DROP (V ) CEsat 3 2 LOW INPUT CAPACITANCE 1 HIGH CURRENT CAPABILITY TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Internal schematic diagram designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. Applications LIGHT DIMMER HID WELDING MOTOR CONTROL STATIC RELAYS Order codes Sales Type Marking Package Packaging STGW35NB60SD GW35NB60SD TO-247 TUBE Rev 1 November 2005 1/13 www.st.com 131 Electrical ratings STGW35NB60SD 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 600 V CES GS I Note 4 Collector Current (continuous) at 25C 70 A C I Note 4 Collector Current (continuous) at 100C 35 A C I Note 1 Collector Current (pulsed) 250 A CM V Gate-Emitter Voltage 20 V GE I Diode RMS Forward Current at T = 25C 30 A f C P Total Dissipation at T = 25C 200 W TOT C T Operating Junction Temperature j 55 to 150 C T Storage Temperature stg Maximum Lead Temperature for Soldering T 300 C L Purpose (1.6mm from case, for 10sec.) Table 2. Thermal resistance Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case (IGBT) -- -- 0.625 C/W Rthj-case Thermal Resistance Junction-case (DIODE) -- -- 1.5 C/W Rthj-amb Thermal Resistance Junction-ambient -- -- 50 C/W 2/13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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