X-On Electronics has gained recognition as a prominent supplier of STGWA25S120DF3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWA25S120DF3 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWA25S120DF3 STMicroelectronics

Name: STGWA25S120DF3
Brand: STMicroelectronics
SKU: STGWA25S120DF3_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGWA25S120DF3 electronic component of STMicroelectronics

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Part No.	STGWA25S120DF3
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	STMicroelectronics IGBT Transistors
Datasheet:	STGWA25S120DF3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STGWA25S120DF3 More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 8.2174 10 : USD 5.3747 25 : USD 5.1441 100 : USD 4.5324 600 : USD 3.9609 3000 : USD 3.6399	N/A Obsolete

0 MOQ : 13 Multiples : 1	13 : USD 2.7267	N/A Obsolete

We are delighted to provide the STGWA25S120DF3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWA25S120DF3 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time V = 1.6 V (typ.) I = 25 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode 2 7 Applications 2 ORQJ OHDGV 7 Industrial drives UPS Figure 1. Internal schematic diagram Solar % 7 & RU Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop * structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive V temperature CE(sat) coefficient and tight parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packing STGW25S120DF3 G25S120DF3 TO-247 Tube STGWA25S120DF3 G25S120DF3 TO-247 long leads Tube December 2014 DocID026374 Rev 2 1/18 This is information on a product in full production. www.st.comContents STGW25S120DF3, STGWA25S120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 12 4 Package information 13 4.1 TO-247, STGW25S120DF3 . 13 4.2 TO-247 long leads, STGWA25S120DF3 . 15 5 Revision history . 17 2/18 DocID026374 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1.2 kV 1.2 kV
Collector-Emitter Saturation Voltage 1.6 V 1.6 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 50 A 50 A
Gate-Emitter Leakage Current 250 nA 250 nA
Package / Case TO 247 - 3 TO 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 375 W 375 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series 900 - 1300V Igbts 900 - 1300V Igbts
Continuous Collector Current Ic Max 25 A 25 A
Brand Stmicroelectronics Stmicroelectronics
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 600 600
Subcategory Igbts Igbts
Taric 8541290000 8541290000