STGWA40H60DLFB STMicroelectronics

STGWA40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) I = 40 A C Tight parameter distribution Safe paralleling Low thermal resistance Low V soft recovery co-packaged diode F Applications Induction heating Figure 1: Internal schematic diagram Microwave oven C (2) Resonant converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series G (1) of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling Sc12850 no tab E (3) operation. Table 1: Device summary Order code Marking Package Packaging STGWA40H60DLFB G40H60DLFB TO-247 long leads Tube March 2017 DocID030367 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STGWA40H60DLFB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package mechanical data ............................................................. 12 4.1 TO247 long leads package mechanical data .................................. 12 5 Revision history ............................................................................ 14 2/15 DocID030367 Rev 1