Product Information

STGWT80V60DF

STGWT80V60DF electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gte FieldStop IGBT 600V 80A
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 19.6033 ea
Line Total: USD 19.6

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STGWT80V60DF
STMicroelectronics

1 : USD 19.6033
5 : USD 16.5197
10 : USD 13.689
50 : USD 11.8056
100 : USD 10.8956
250 : USD 10.2131

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STGWT80V60DF
STMicroelectronics

1 : USD 9.9611
10 : USD 6.5178
25 : USD 6.1545
100 : USD 5.3425
600 : USD 4.5304
1200 : USD 4.1244

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features TAB Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.85 V (typ.) I = 80 A CE(sat) C Tight parameters distribution 3 Safe paralleling 3 2 2 1 Low thermal resistance 1 Very fast soft recovery antiparallel diode TO-247 TO-3P Applications Photovoltaic inverters Figure 1. Internal schematic diagram Uninterruptible power supply C (2 or TAB) Welding Power factor correction Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to E (3) maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW80V60DF GW80V60DF TO-247 Tube STGWT80V60DF GWT80V60DF TO-3P Tube January 2014 DocID024362 Rev 2 1/18 This is information on a product in full production. www.st.com 18Contents STGW80V60DF, STGWT80V60DF Contents 1 Electrical ratings 2 2 Electrical characteristics . 3 2.1 Electrical characteristics (curves) 5 3 Test circuits 10 4 Package mechanical data 11 5 Revision history . 15 2/18 DocID024362 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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