Product Information

STGWT20V60F

STGWT20V60F electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.7048 ea
Line Total: USD 6.7

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STGWT20V60F
STMicroelectronics

1 : USD 6.7048
10 : USD 2.4361
25 : USD 2.2972
100 : USD 1.9874
600 : USD 1.6775
1200 : USD 1.4852

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STGFW20V60F, STGW20V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.8 V (typ.) I = 20 A CE(sat) C 111 Tight parameter distribution 3 2 3 1 2 1 Safe paralleling TO-247 TO-3PF Low thermal resistance Applications Photovoltaic inverters C(2, TAB) Uninterruptible power supply Welding Power factor correction G(1) Very high frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V temperature CE(sat) coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW20V60F STGW20V60F Product summary Order code STGFW20V60F Marking GFW20V60F Package TO-3PF Packing Tube Order code STGW20V60F Marking GW20V60F Package TO-247 Packing Tube DS9775 - Rev 2 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW20V60F, STGW20V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247 TO-3PF V Collector-emitter voltage (V = 0 V) 600 V CES GE (1) Continuous collector current at T = 25 C 40 40 C I A C (1) Continuous collector current at T = 100 C 20 20 C (2) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 167 86.7 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s, T = 25 C) C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF R Thermal resistance, junction-to-case 0.90 1.73 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9775 - Rev 2 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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