X-On Electronics has gained recognition as a prominent supplier of STGWT20H60DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWT20H60DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWT20H60DF STMicroelectronics

Name: STGWT20H60DF
Brand: STMicroelectronics
SKU: STGWT20H60DF_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGWT20H60DF electronic component of STMicroelectronics

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Part No.	STGWT20H60DF
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
Datasheet:	STGWT20H60DF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STGWT20H60DF More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 6.5684 10 : USD 2.2374 100 : USD 1.7447 500 : USD 1.4779 1000 : USD 1.2316 5000 : USD 1.1392 10000 : USD 1.0982 25000 : USD 1.0776		N/A Obsolete

We are delighted to provide the STGWT20H60DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWT20H60DF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated 3 3 2 2 Ultrafast soft recovery antiparallel diode 1 1 TO-247 TO-3P Applications Motor control UPS, PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an C (2, TAB) advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive G (1) V temperature coefficient and very tight CE(sat) parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Packages Packaging STGW20H60DF GW20H60DF TO-247 Tube STGWT20H60DF GWT20H60DF TO-3P Tube June 2013 DocID024745 Rev 1 1/17 This is information on a product in full production. www.st.com 17Contents STGW20H60DF, STGWT20H60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID024745 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 600 V 600 V
Collector-Emitter Saturation Voltage 2 V 2 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 40 A 40 A
Gate-Emitter Leakage Current 250 nA 250 nA
Package / Case TO - 3P - 3 TO - 3P - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 167 W 167 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series Stgwt20h60df Stgwt20h60df
Continuous Collector Current Ic Max 20 A 20 A
Brand Stmicroelectronics Stmicroelectronics
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 300 300
Subcategory Igbts Igbts