X-On Electronics has gained recognition as a prominent supplier of STGWF30NC60S IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWF30NC60S IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWF30NC60S STMicroelectronics

STGWF30NC60S electronic component of STMicroelectronics
STGWF30NC60S STMicroelectronics
STGWF30NC60S IGBT Transistors
STGWF30NC60S  Semiconductors

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See Product Specifications
Part No. STGWF30NC60S
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: Transistors Bipolar - BJT 30A 600V Fast IGBT 5kHz 1.9 VCE
Datasheet: STGWF30NC60S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
300: USD 2.8759 ea
Line Total: USD 862.77 
Availability - 0
MOQ: 300  Multiples: 300
Pack Size: 300
Availability Price Quantity
0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 300
Multiples : 300
300 : USD 2.8759
600 : USD 2.6629
900 : USD 2.6629
1200 : USD 2.6629
1500 : USD 2.6629

0
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 6.1217
10 : USD 4.0109
25 : USD 3.7904

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 19
Multiples : 1
19 : USD 4.0781
100 : USD 3.381
500 : USD 2.8922

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Collector-Emitter Saturation Voltage
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Technology
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Technology
Minimum Operating Temperature
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Brand
Continuous Collector Current
Transistor Polarity
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the STGWF30NC60S from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWF30NC60S and other electronic components in the IGBT Transistors category and beyond.

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STGWF30NC60S Datasheet 30 A, 600 V, fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (V ) CE(sat) High current capability Applications 3 Motor drive 2 1 Description TO-3PF This device utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior. C(2) G(1) E(3) SC12650 Product status link STGWF30NC60S Product summary Order code STGWF30NC60S Marking G30NC60S Package TO-3PF Packing Tube DS5369 - Rev 6 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGWF30NC60S Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 35 C (1) I A C Continuous collector current at T = 100 C 18 C (2) I Turn-off latching current 150 A CL (3) I Pulsed collector current 150 A CP V Gate-emitter voltage 20 V GE Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s, T = 25 C) C P Total power dissipation at T = 25 C 79 W TOT C T Operating junction temperature range - 55 to 150 C J T T 1. J max C Calculated according to the iterative formula: I T = C C R V T , I T t j C C E s at max J max C C 2. V = 80%,(V ), T =150 C, R = 10 , V = 15 V. clamp CES J G GE 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.58 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA DS5369 - Rev 6 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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