X-On Electronics has gained recognition as a prominent supplier of MPQ2222A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MPQ2222A Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MPQ2222A Central Semiconductor

MPQ2222A electronic component of Central Semiconductor
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See Product Specifications
Part No.MPQ2222A
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Silicone Quad Transistor
Datasheet: MPQ2222A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 3.2381 ea
Line Total: USD 80.95 
Availability - 0
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 4
Multiples : 4
4 : USD 3.9281
20 : USD 3.5217
50 : USD 3.3863
150 : USD 3.2508
400 : USD 3.2508

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 25
Multiples : 25
25 : USD 3.2381

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 10.125
10 : USD 3.4992
25 : USD 3.2955
100 : USD 2.8141
500 : USD 2.3143
1000 : USD 1.9255
2500 : USD 1.9069
7000 : USD 1.9069

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the MPQ2222A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MPQ2222A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MPQ2222 MPQ2222A www.centralsemi.com DESCRIPTION: NPN SILICON QUAD TRANSISTOR The CENTRAL SEMICONDUCTOR MPQ2222 and MPQ2222A types are comprised of four independent NPN silicon transistors mounted in a 14-pin DIP, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (T =25C) SYMBOL MPQ2222 MPQ2222A UNITS A Collector-Base Voltage V 60 75 V CBO Collector-Emitter Voltage V 40 40 V CEO Emitter-Base Voltage V 5.0 6.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation (per transistor) P 650 mW D Power Dissipation (total package) P 1.9 W D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance (total package) 66 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C) A MPQ2222 MPQ2222A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 50 - - nA CBO CB I V=60V - - - 10 nA CBO CB I V=3.0V - 100 - 100 nA EBO EB BV I=10A 60 - 75 - V CBO C BV I=10mA 40 - 40 - V CEO C BV I=10A 5.0 - 6.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.3 V CE(SAT) C B V I =300mA, I=30mA - 1.6 - - V CE(SAT) C B V I =500mA, I=50mA - - - 1.0 V CE(SAT) C B V I =150mA, I=15mA - 1.3 0.6 1.2 V BE(SAT) C B V I =300mA, I=30mA - 2.6 - - V BE(SAT) C B V I =500mA, I=50mA - - - 2.0 V BE(SAT) C B h V =10V, I=0.1mA - - 35 - FE CE C h V =10V, I=1.0mA - - 50 - FE CE C h V =10V, I=10mA 75 - 75 - FE CE C h V =10V, I=150mA 100 300 100 300 FE CE C h V =10V, I=300mA 30 - - - FE CE C h V =10V, I=500mA - - 40 - FE CE C f V =20V, I =20mA, f=100MHz 200 - 200 - MHz T CE C C V =10V, I =0, f=1.0MHz - 8.0 - 8.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 30 - 30 pF ib EB C t V =30V, V =0.5V, I =150mA, I =15mA - - - 35 ns r CC BE C B1 t V =30V, I =150mA, I =I=15mA - - - 285 ns s CC C B1 B2 R2 (30-January 2012)MPQ2222 MPQ2222A NPN SILICON QUAD TRANSISTOR TO-116 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector Q1 8) Collector Q3 2) Base Q1 9) Base Q3 3) Emitter Q1 10) Emitter Q3 4) No Connection 11) No Connection 5) Emitter Q2 12) Emitter Q4 6) Base Q2 13) Base Q4 7) Collector Q2 14) Collector Q4 MARKING: FULL PART NUMBER R2 (30-January 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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