MPQ2907A www.centralsemi.com PNP SILICON QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ2907A type is comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for small signal, general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation (per transistor) P 650 mW D Power Dissipation (total package) P 2.0 W D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=30V 50 nA CBO CB I V=3.0V 50 nA EBO EB BV I=10A 60 V CBO C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.4 V CE(SAT) C B V I =300mA, I=30mA 1.6 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B V I =300mA, I=30mA 2.6 V BE(SAT) C B h V =10V, I=10mA 75 FE CE C h V =10V, I=150mA 100 FE CE C h V =10V, I=300mA 50 FE CE C f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, I =0, f=1.0MHz 6.0 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz 20 30 pF ib BE C t V =30V, I =150mA, I=15mA 30 ns on CC C B1 t V =6.0V, I =150mA, I =I =15mA 150 ns off CC C B1 B2 R1 (30-January 2012)MPQ2907A PNP SILICON QUAD TRANSISTOR TO-116 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector Q1 8) Collector Q3 2) Base Q1 9) Base Q3 3) Emitter Q1 10) Emitter Q3 4) No Connection 11) No Connection 5) Emitter Q2 12) Emitter Q4 6) Base Q2 13) Base Q4 7) Collector Q2 14) Collector Q4 MARKING: FULL PART NUMBER R1 (30-January 2012) www.centralsemi.com