STGWA25H120DF2 STMicroelectronics

STGW25H120DF2, STGWA25H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 3 V = 2.1 V (typ.) I = 25 A CE(sat) C 2 3 1 2 1 5 s minimum short circuit withstand time at T = 150 C J TO-247 TO-247 long leads Safe paralleling Low thermal resistance Very fast recovery antiparallel diode Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status links STGW25H120DF2 STGWA25H120DF2 Product summary Order code STGW25H120DF2 Marking G25H120DF2 Package TO-247 Packing Tube Order code STGWA25H120DF2 Marking G25H120DF2 Package TO-247 long leads Packing Tube DS9297 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGW25H120DF2, STGWA25H120DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 50 C I A C Continuous collector current at T = 100 C 25 C (1) I Pulsed collector current 100 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s, D 0.01) 30 p Continuous forward current at T = 25 C 50 C I A F Continuous forward current at T = 100 C 25 C (1) I Pulsed forward current 100 A FP P Total power dissipation at T = 25 C 375 W TOT C T Operating junction temperature range - 55 to 175 C J T Storage temperature range - 55 to 150 C STG 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance, junction-to-case IGBT 0.4 R C/W thJC Thermal resistance, junction-to-case diode 1.47 R Thermal resistance, junction-to-ambient 50 C/W thJA DS9297 - Rev 5 page 2/17