X-On Electronics has gained recognition as a prominent supplier of STGWA25M120DF3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWA25M120DF3 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWA25M120DF3 STMicroelectronics

STGWA25M120DF3 electronic component of STMicroelectronics
STGWA25M120DF3 STMicroelectronics
STGWA25M120DF3 IGBT Transistors
STGWA25M120DF3  Semiconductors

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Part No. STGWA25M120DF3
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: STMicroelectronics IGBT Transistors
Datasheet: STGWA25M120DF3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
19: USD 3.4727 ea
Line Total: USD 65.98 
Availability - 532
Ship by Fri. 02 May to Thu. 08 May
MOQ: 19  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 11.452
10 : USD 6.6999
30 : USD 6.073
90 : USD 5.5469

22
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 8.176
4 : USD 5.138
10 : USD 4.858
30 : USD 4.732
120 : USD 4.676

532
Ship by Fri. 02 May to Thu. 08 May
MOQ : 19
Multiples : 1
19 : USD 3.4727
19 : USD 3.3838
25 : USD 3.0896
100 : USD 2.9623

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the STGWA25M120DF3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWA25M120DF3 and other electronic components in the IGBT Transistors category and beyond.

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STGWA25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss, M series IGBT in a TO-247 long leads package Features Maximum junction temperature: T = 175 C J 10 s of short-circuit withstand time Low V = 1.85 V (typ.) I = 25 A CE(sat) C Tight parameter distribution Positive V temperature coefficient CE(sat) Low thermal resistance Soft- and fast-recovery antiparallel diode C(2, TAB) Applications Industrial drives G(1) UPS Solar Welding E(3) NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling Product status link operation. STGWA25M120DF3 Product summary Order code STGWA25M120DF3 Marking G25M120DF3 Package TO-247 long leads Packing Tube DS12637 - Rev 1 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGWA25M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 50 A C I C Continuous collector current at T = 100 C 25 A C (1) I Pulsed collector current 100 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 V Continuous forward current at T = 25 C 50 A C I F Continuous forward current at T = 100 C 25 A C (1) I Pulsed forward current 100 A FP P Total dissipation at T = 25 C 375 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.4 C/W R thJC Thermal resistance junction-case diode 0.96 C/W R Thermal resistance junction-ambient 50 C/W thJA DS12637 - Rev 1 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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