STGWA15M120DF3 STMicroelectronics

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time V = 1.85 V (typ.) I = 15 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode Applications 2 7 Industrial drives 2 ORQJ OHDGV 7 UPS Solar Welding Figure 1.Internal schematic diagram Description % 7 & RU This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of * inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packaging STGW15M120DF3 G15M120DF3 TO-247 Tube STGWA15M120DF3 G15M120DF3 TO-247 long leads Tube October 2014 DocID026222 Rev 2 1/19 This is information on a product in full production. www.st.com 19Contents STGW15M120DF3, STGWA15M120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 12 4 Package mechanical data 13 4.1 TO-247, STGW15M120DF3 . 14 4.2 TO-247 long leads, STGWA15M120DF3 . 16 5 Revision history . 18 2/19 DocID026222 Rev 2