TO-247 TYPICAL PERFORMANCE CURVES APT25GT120BR(G) 1200V APT25GT120BR APT25GT120BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltag e Drop High Freq. Switching to 50KHz Low Tail Current Ultra Low Leakag e Current C RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter UNIT APT25GT120BR(G) V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 54 C1 C I Continuous Collector Current T = 110C 25 Amps C2 C 1 I Pulsed Collector Current 75 CM Switching Safe Operating Area T = 150C SSOA 75A 1200V J P Total Power Dissipation Watts 347 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 1.5mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) GE(TH) 4.5 5.5 6.5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 25A, T = 25C) GE C j 2.7 3.2 3.7 V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 25A, T = 125C) GE C j 3.9 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 100 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) TBD CE GE j I nA Gate-Emitter Leakage Current (V = 20V) GES 120 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT25GT120BR(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance Capacitance 1650 ies C pF Output Capacitance V = 0V, V = 25V 250 oes GE CE C f = 1 MHz Reverse Transfer Capacitance 110 res V V Gate-to-Emitter Plateau Voltage Gate Charge 10.0 GEP 3 Q V = 15V Total Gate Charge 170 g GE V = 600V Q nC Gate-Emitter Charge CE 20 ge I = 25A Q C Gate-Collector Mille) Charge 100 gc T = 150C, R = 5, V = J G GE Switching Safe Operating Area SSOA 75 A 15V, L = 100H,V = 1200V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 14 V = 800V t Current Rise Time 27 CC r ns t V = 15V Turn-off Delay Time d(off) GE 150 I = 25A t C Current Fall Time 36 f R = 5 4 G E Turn-on Switching Energy 930 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 1860 on2 6 E Turn-off Switching Energy 720 off t Inductive Switching (125C) Turn-on Delay Time 14 d(on) t V = 800V Current Rise Time 27 r CC ns V = 15V t Turn-off Delay Time GE d(off) 175 I = 25A t C Current Fall Time 45 f R = 5 4 4 G E 925 Turn-on Switching Energy on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 3265 on2 6 E Turn-off Switching Energy 965 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .36 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reser ves the right to chang e , without notice , the specifications and information contained herein. 052-6268 Rev D 6-2008