APT26F120B2 APT26F120L 1200V, 27A, 0.58 Max, t 335ns rr N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss APT26F120B2 APT26F120L intrinsic gate resistance and capacitance of the poly-silicon gate structure help control D di/dt during switching, resulting in low EMI and reliable paralleling, even when switching Single die FREDFET G at very high frequency. S FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 27 C I D Continuous Drain Current T = 100C 16 A C 1 I Pulsed Drain Current 105 DM V Gate-Source Voltage 30 V GS E 2 2165 Single Pulse Avalanche Energy mJ AS I 14 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C 1135 W D C R 0.11 Junction to Case Thermal Resistance JC C/W R 0.11 Case to Sink Thermal Resistance, Flat, Greased Surface CS T ,T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L oz 0.22 W Package Weight T g 6.2 inlbf 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT26F120B2 L J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250A Drain-Source Breakdown Voltage 1200 V BR(DSS) GS D V /T Reference to 25C, I = 250A Breakdown Voltage Temperature Coef cient 1.41 V/C BR(DSS) J D V = 10V, I = 14A R 3 Drain-Source On Resistance 0.48 0.58 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 2.5mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 1200V T = 25C 250 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J V = 30V I Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 14A fs Forward Transconductance 31 S DS D C Input Capacitance 9670 iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 115 rss f = 1MHz C Output Capacitance 715 oss pF 4 C Effective Output Capacitance, Charge Related 275 o(cr) V = 0V, V = 0V to 800V GS DS 5 C Effective Output Capacitance, Energy Related 140 o(er) Q Total Gate Charge 300 g V = 0 to 10V, I = 14A, GS D Q Gate-Source Charge nC gs 50 V = 600V DS Q Gate-Drain Charge gd 140 t Resistive Switching Turn-On Delay Time d(on) 50 t V = 800V, I = 14A Current Rise Time 31 r DD D ns 6 t R = 2.2 , V = 15V Turn-Off Delay Time 170 d(off) G GG t Current Fall Time 48 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current D MOSFET symbol I S 27 showing the (Body Diode) integral reverse p-n A G Pulsed Source Current junction diode I SM 105 (body diode) 1 S (Body Diode) V I = 14A, T = 25C, V = 0V Diode Forward Voltage 1.1 V SD SD J GS T = 25C 335 J t Reverse Recovery Time ns rr T = 125C 640 J 3 I = 14A T = 25C 1.72 SD J Q Reverse Recovery Charge C rr V = 100V T = 125C 4.67 DD J di /dt = 100A/s T = 25C 11 SD J I Reverse Recovery Current A rrm T = 125C 16 J I 14A, di/dt 1000A/s, V = 800V, SD DD dv/dt Peak Recovery dv/dt V/ns 25 T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 22.09mH, R = 25, I = 14A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -4.40E-7/V 2 + 5.34E-8/V + 7.59E-11. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8143 Rev C 5-2009