X-On Electronics has gained recognition as a prominent supplier of APT26F120B2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. APT26F120B2 MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

APT26F120B2 Microchip

APT26F120B2 electronic component of Microchip
Product Image X-ON
Product Image X-ON
Product Image X-ON

Images are for reference only
See Product Specifications
Part No.APT26F120B2
Manufacturer: Microchip
Category: MOSFETs
Description: MOSFET FG, FREDFET, 1200V, TO-247 T-MAX
Datasheet: APT26F120B2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 28.039 ea
Line Total: USD 841.17 
Availability - 0
MOQ: 30  Multiples: 30
Pack Size: 30
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 30
Multiples : 30
30 : USD 28.039
100 : USD 25.861

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 19.3135
2 : USD 12.6523
4 : USD 11.956

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Height
Length
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APT26F120B2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT26F120B2 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
Stock Image APT29F100B2
MOSFET FG, FREDFET, 1000V, TO-247 T-MAX, RoHS
Stock : 30
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image APT28F60B
MOSFET Power FREDFET - MOS8
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image APT29F100B2
MOSFET FG, FREDFET, 1000V, TO-247 T-MAX, RoHS
Stock : 30
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

APT26F120B2 APT26F120L 1200V, 27A, 0.58 Max, t 335ns rr N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss APT26F120B2 APT26F120L intrinsic gate resistance and capacitance of the poly-silicon gate structure help control D di/dt during switching, resulting in low EMI and reliable paralleling, even when switching Single die FREDFET G at very high frequency. S FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 27 C I D Continuous Drain Current T = 100C 16 A C 1 I Pulsed Drain Current 105 DM V Gate-Source Voltage 30 V GS E 2 2165 Single Pulse Avalanche Energy mJ AS I 14 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C 1135 W D C R 0.11 Junction to Case Thermal Resistance JC C/W R 0.11 Case to Sink Thermal Resistance, Flat, Greased Surface CS T ,T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L oz 0.22 W Package Weight T g 6.2 inlbf 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT26F120B2 L J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250A Drain-Source Breakdown Voltage 1200 V BR(DSS) GS D V /T Reference to 25C, I = 250A Breakdown Voltage Temperature Coef cient 1.41 V/C BR(DSS) J D V = 10V, I = 14A R 3 Drain-Source On Resistance 0.48 0.58 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 2.5mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 1200V T = 25C 250 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J V = 30V I Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 14A fs Forward Transconductance 31 S DS D C Input Capacitance 9670 iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 115 rss f = 1MHz C Output Capacitance 715 oss pF 4 C Effective Output Capacitance, Charge Related 275 o(cr) V = 0V, V = 0V to 800V GS DS 5 C Effective Output Capacitance, Energy Related 140 o(er) Q Total Gate Charge 300 g V = 0 to 10V, I = 14A, GS D Q Gate-Source Charge nC gs 50 V = 600V DS Q Gate-Drain Charge gd 140 t Resistive Switching Turn-On Delay Time d(on) 50 t V = 800V, I = 14A Current Rise Time 31 r DD D ns 6 t R = 2.2 , V = 15V Turn-Off Delay Time 170 d(off) G GG t Current Fall Time 48 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current D MOSFET symbol I S 27 showing the (Body Diode) integral reverse p-n A G Pulsed Source Current junction diode I SM 105 (body diode) 1 S (Body Diode) V I = 14A, T = 25C, V = 0V Diode Forward Voltage 1.1 V SD SD J GS T = 25C 335 J t Reverse Recovery Time ns rr T = 125C 640 J 3 I = 14A T = 25C 1.72 SD J Q Reverse Recovery Charge C rr V = 100V T = 125C 4.67 DD J di /dt = 100A/s T = 25C 11 SD J I Reverse Recovery Current A rrm T = 125C 16 J I 14A, di/dt 1000A/s, V = 800V, SD DD dv/dt Peak Recovery dv/dt V/ns 25 T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 22.09mH, R = 25, I = 14A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -4.40E-7/V 2 + 5.34E-8/V + 7.59E-11. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8143 Rev C 5-2009

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi
Premier Supplier of the 109P0412H3D01 DC Fans in USA, India image

Jul 9, 2024
The electronics industry is ever-evolving, with various components playing crucial roles in the development of modern electronic devices. Among these components, DC fans are vital for cooling electronic systems, ens
Retailer for A2M1CSQ12VDC1.6 Automotive Relays by CIT Relay image

Nov 28, 2024
The A2M1CSQ12VDC1.6 Automotive Relays by CIT Relay are versatile and reliable components designed for modern automotive systems. With a 12V DC coil, SPDT functionality, and quick-connect terminals, these relays are ideal for controlling lighting, HVAC, fuel pumps, and power distribution. Their
97-3101A-14S-6P Circular MIL Spec Connector by Amphenol image

Nov 11, 2024
The 97-3101A-14S-6P Circular MIL Spec Connector by Amphenol is a reliable, high-performance connector featuring a 6-pin configuration, 14S shell size, and solder termination. Widely used in military, aerospace, and industrial applications, it ensures secure, durable connections even in harsh cond
The Premier Supplier of the 26-03-4121 Molex Connector image

Jun 20, 2024

the importance of reliable and high-quality components cannot be overstated. Among these components, connectors play a pivotal role in ensuring the integrity and functionality of electronic systems. The 26-03-4121 Mo

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON Electronics
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronics Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing. All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted AS9120 Certified