X-On Electronics has gained recognition as a prominent supplier of IKB40N65EH5ATMA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKB40N65EH5ATMA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKB40N65EH5ATMA1 Infineon

IKB40N65EH5ATMA1 electronic component of Infineon
IKB40N65EH5ATMA1 Infineon
IKB40N65EH5ATMA1 IGBT Transistors
IKB40N65EH5ATMA1  Semiconductors

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Part No. IKB40N65EH5ATMA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors 40A 650V TRENCHSTOP 5 fast H5 IGBT copacked with 40A Rapid 1 diode
Datasheet: IKB40N65EH5ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.6657 ea
Line Total: USD 5.67 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 1000
Multiples : 1000
1000 : USD 2.4661

0
Ship by Thu. 30 Jan to Wed. 05 Feb
MOQ : 1
Multiples : 1
1 : USD 5.6657
10 : USD 3.7985
100 : USD 2.8072
500 : USD 2.5849
1000 : USD 2.4705

0
Ship by Tue. 28 Jan to Thu. 30 Jan
MOQ : 1
Multiples : 1
1 : USD 6.2978
10 : USD 4.1201
25 : USD 3.89
100 : USD 3.3776
250 : USD 3.2731
500 : USD 2.8757
1000 : USD 2.4992

0
Ship by Tue. 28 Jan to Thu. 30 Jan
MOQ : 1
Multiples : 1
1 : USD 5.3736
5 : USD 3.5211
12 : USD 3.324

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
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Subcategory
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We are delighted to provide the IKB40N65EH5ATMA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKB40N65EH5ATMA1 and other electronic components in the IGBT Transistors category and beyond.

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IKB40N65EH5 th High speed switching series 5 generation TM TRENCHSTOP 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode C Features and Benefits: High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low QG E IGBT copacked with full rated current RAPID 1 fast antiparallel diode Maximum junction temperature 175C C Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models: IKB40N65EH5 th High speed switching series 5 generation Table of Contents Description 1 Table of Contents . 2 Maximum Ratings . 3 Thermal Resistance . 3 Electrical Characteristics 4 Electrical Characteristics Diagrams . 7 Package Drawing .13 Testing Conditions 14 Revision History 15 Disclaimer .16 Datasheet 2 V 2.1 2018-04-04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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