Product Information

RGT40NS65DGC9

RGT40NS65DGC9 electronic component of ROHM

Datasheet
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.8205 ea
Line Total: USD 3.82

970 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 3.1917
10 : USD 2.6934
50 : USD 2.6696
100 : USD 2.3018
250 : USD 2.2306
500 : USD 2.0645
1000 : USD 1.8154
5000 : USD 1.7441

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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RGT40NS65D 650V 20A Field Stop Trench IGBT Data Sheet lOutline LPDS / TO-262 V 650V CES (2) I 20A C(100C) V 1.65V CE(sat) (Typ.) (1) (3) P 161W D (1)(2) (3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Low Switching Loss (1) Gate (2) Collector *1 3) Short Circuit Withstand Time 5s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Taping / Tube lApplications General Inverter Reel Size (mm) 330 / - UPS Tape Width (mm) 24 / - Type Power Conditioner Basic Ordering Unit (pcs) 1,000 / 1,000 Welder Packing code TL / C9 Marking RGT40NS65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 40 A C C Collector Current T = 100C I 20 A C C *1 Pulsed Collector Current 60 A I CP T = 25C I 35 A C F Diode Forward Current T = 100C I 20 A C F *1 Diode Pulsed Forward Current 60 A I FP T = 25C P 161 W C D Power Dissipation T = 100C P 70 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 1/11Data Sheet RGT40NS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.93 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 2.12 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 13.3mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 20A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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