X-On Electronics has gained recognition as a prominent supplier of STGP40V60F IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGP40V60F IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGP40V60F STMicroelectronics

STGP40V60F electronic component of STMicroelectronics
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Part No.STGP40V60F
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: STMicroelectronics IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
Datasheet: STGP40V60F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 16
Multiples : 1
16 : USD 2.106
40 : USD 2.028
125 : USD 2.028
400 : USD 1.95
1250 : USD 1.95
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.6213
10 : USD 3.552
30 : USD 3.5051
100 : USD 3.4581
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.8507
10 : USD 2.4734
25 : USD 2.3297
100 : USD 1.9911
500 : USD 1.6318
1000 : USD 1.3445
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 1.415
N/A

Obsolete
0
MOQ : 5
Multiples : 5
5 : USD 1.2569
10 : USD 1.1945
25 : USD 1.166
100 : USD 1.1427
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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We are delighted to provide the STGP40V60F from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGP40V60F and other electronic components in the IGBT Transistors category and beyond.

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STGB40V60F, STGFW40V60F STGP40V60F, STGW40V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Features TAB Maximum junction temperature: T = 175 C J Tail-less switching off 3 3 1 2 2 1 V = 1.8 V (typ.) I = 40 A CE(sat) C D PAK TO-3PF Tight parameters distribution TAB Safe paralleling Low thermal resistance 3 3 2 2 1 1 TO-220 TO-247 Applications C(2, TAB) Welding Power factor correction UPS Solar inverters G(1) Chargers Description E(3) G1C2TABE3 NO DIODE These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGB40V60F STGFW40V60F STGP40V60F STGW40V60F DS9698 - Rev 3 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-247, TO-3PF TO-3P V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 80 A C I C Continuous collector current at T = 100 C 40 A C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 283 98.5 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s T = 25 C) C T Storage temperature range -55 to 150 C stg T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-3P TO-3PF R Thermal resistance, junction-to-case 0.53 1.52 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9698 - Rev 3 page 2/25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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