X-On Electronics has gained recognition as a prominent supplier of STGP30H65F IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGP30H65F IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGP30H65F STMicroelectronics

Name: STGP30H65F
Brand: STMicroelectronics
SKU: STGP30H65F_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGP30H65F electronic component of STMicroelectronics

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Part No.	STGP30H65F
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	IGBT Transistors Trench gte FieldStop IGBT 600V 30A
Datasheet:	STGP30H65F Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.0747 ea
Line Total: USD 0.07

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

STGP30H65F More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 15 Nov to Thu. 21 Nov MOQ : 1 Multiples : 1	1 : USD 0.0747

0 Ship by Fri. 15 Nov to Thu. 21 Nov MOQ : 10 Multiples : 10	10 : USD 2.3363 300 : USD 2.0977

0 Ship by Thu. 21 Nov to Mon. 25 Nov MOQ : 1 Multiples : 1	1 : USD 7.1055 10 : USD 2.5644 25 : USD 2.4469 100 : USD 2.1583 500 : USD 1.8912 1000 : USD 1.731

0 Ship by Fri. 15 Nov to Thu. 21 Nov MOQ : 5 Multiples : 1	5 : USD 0

We are delighted to provide the STGP30H65F from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGP30H65F and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGP30H65F Trench gate field-stop IGBT, H series 650 V, 30 A high speed Datasheet - production data Features High speed switching Tight parameters distribution TAB Safe paralleling Low thermal resistance Short-circuit rated 3 2 1 Applications TO-220 Inverter UPS PFC Description Figure 1. Internal schematic diagram This device is an IGBT developed using an advanced proprietary trench gate and field stop C (2, TAB) structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive G (1) V temperature coefficient and very tight CE(sat) parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Package Packaging STGP30H65F GP30H65F TO-220 Tube December 2013 DocID025631 Rev 1 1/13 This is information on a product in full production. www.st.com 13Contents STGP30H65F Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 9 4 Package mechanical data 10 5 Revision history . 12 2/13 DocID025631 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

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SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 650 V 650 V
Collector-Emitter Saturation Voltage 2.4 V 2.4 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 60 A 60 A
Gate-Emitter Leakage Current 250 nA 250 nA
Power Dissipation 260 W 260 W
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 260 W 260 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series Stgp30h65f Stgp30h65f
Continuous Collector Current Ic Max 30 A 30 A
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 50 50
Cnhts 8541290000 8541290000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000