STGP30M65DF2 STMicroelectronics

STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) I = 30 A CE(sat) C TAB Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode 3 2 1 Applications TO-220 Motor control UPS PFC Figure 1: Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGP30M65DF2 G30M65DF2 TO-220 Tube April 2017 DocID027355 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STGP30M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 4.1 TO-220 type A package information ................................................ 13 5 Revision history ............................................................................ 15 2/16 DocID027355 Rev 3