X-On Electronics has gained recognition as a prominent supplier of RGW00TK65DGVC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGW00TK65DGVC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGW00TK65DGVC11 ROHM

Name: RGW00TK65DGVC11
Brand: ROHM
SKU: RGW00TK65DGVC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGW00TK65DGVC11 electronic component of ROHM

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Part No.	RGW00TK65DGVC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
Datasheet:	RGW00TK65DGVC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

450: USD 3.96 ea
Line Total: USD 1782

Availability - 0

MOQ: 450 Multiples: 450
Pack Size: 450

RGW00TK65DGVC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 8.0456 10 : USD 6.1061 100 : USD 4.7046 500 : USD 4.0031

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 450 Multiples : 450	450 : USD 3.96

We are delighted to provide the RGW00TK65DGVC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGW00TK65DGVC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGW00TK65D 650V 50A Field Stop Trench IGBT Datasheet Outline TO-3PFM V 650V CES I 26A C (100) V 1.5V I =50A CE(sat) (Typ.) C P 89W D (1)(2)(3) Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant Applications Packaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type Solar Inverter Basic Ordering Unit (pcs) 450 IH Packing Code C11 RGW00TK65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 45 A C C Collector Current T = 100C I 26 A C C *1 200 A Pulsed Collector Current I CP T = 25C I 34 A C F Diode Forward Current T = 100C I 19 A C F *1 Diode Pulsed Forward Current 200 A I FP T = 25C P 89 W C D Power Dissipation T = 100C P 44 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T . jmax www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.10 - Rev.A 1/11Datasheet RGW00TK65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case -- 1.67 C/W (j-c) R Thermal Resistance Diode Junction - Case -- 2.29 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - -V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 33.0mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 50A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.10 - Rev.A 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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