X-On Electronics has gained recognition as a prominent supplier of RGW50TS65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGW50TS65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGW50TS65DGC11 ROHM

Hot RGW50TS65DGC11 electronic component of ROHM
RGW50TS65DGC11 ROHM
RGW50TS65DGC11 IGBT Transistors
RGW50TS65DGC11  Semiconductors

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See Product Specifications
Part No. RGW50TS65DGC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors 650V 25A Field Stop Trench IGBT
Datasheet: RGW50TS65DGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 1.597 ea
Line Total: USD 47.91 
Availability - 29
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 30  Multiples: 1
Pack Size: 1
Availability Price Quantity
430
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 3.6094
10 : USD 3.2361
25 : USD 2.7951

29
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 30
Multiples : 1
30 : USD 1.597

29
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 29
Multiples : 1
29 : USD 3.6516

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGW50TS65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGW50TS65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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RGW50TS65 Datasheet 650V 25A Field Stop Trench IGBT lOutline TO-247N V 650V CES I 25A C (100C) V 1.5V CE(sat) (Typ.) P 156W D (1) (2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector (3) Emitter 3) Low Switching Loss & Soft Switching (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplication lPackaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type Solar Inverter Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGW50TS65 lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 50 A C C Collector Current T = 100C I 25 A C C *1 Pulsed Collector Current I 100 A CP T = 25C P 156 W C D Power Dissipation T = 100C P 78 W C D T Operating Junction Temperature -40 to +175 C j Storage Temperature T -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2021.02 - Rev.B 2021 ROHM Co., Ltd. All rights reserved. 1/9Datasheet RGW50TS65 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.96 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 16.4mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 25A, V = 15V, C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2021.02 - Rev.B 2021 ROHM Co., Ltd. All rights reserved. 2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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