RGW50TS65DGC11 ROHM

RGW50TS65 Datasheet 650V 25A Field Stop Trench IGBT lOutline TO-247N V 650V CES I 25A C (100C) V 1.5V CE(sat) (Typ.) P 156W D (1) (2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector (3) Emitter 3) Low Switching Loss & Soft Switching (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplication lPackaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type Solar Inverter Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGW50TS65 lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 50 A C C Collector Current T = 100C I 25 A C C *1 Pulsed Collector Current I 100 A CP T = 25C P 156 W C D Power Dissipation T = 100C P 78 W C D T Operating Junction Temperature -40 to +175 C j Storage Temperature T -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2021.02 - Rev.B 2021 ROHM Co., Ltd. All rights reserved. 1/9Datasheet RGW50TS65 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.96 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 16.4mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 25A, V = 15V, C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2021.02 - Rev.B 2021 ROHM Co., Ltd. All rights reserved. 2/9