X-On Electronics has gained recognition as a prominent supplier of EM6J1T2R MOSFET across the USA, India, Europe, Australia, and various other global locations. EM6J1T2R MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

EM6J1T2R ROHM

EM6J1T2R electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.EM6J1T2R
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6
Datasheet: EM6J1T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

222: USD 0.1837 ea
Line Total: USD 40.78

Availability - 4180
Ship by Mon. 15 Jul to Fri. 19 Jul
MOQ: 222  Multiples: 1
Pack Size: 1
Availability Price Quantity
159420
Ship by Fri. 19 Jul to Tue. 23 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.3485
100 : USD 0.2461
500 : USD 0.1978
1000 : USD 0.1518
8000 : USD 0.1426
24000 : USD 0.1426
48000 : USD 0.1414

4180
Ship by Mon. 15 Jul to Fri. 19 Jul
MOQ : 222
Multiples : 1
222 : USD 0.1837
500 : USD 0.1583
1000 : USD 0.15
2000 : USD 0.1397

7566
Ship by Mon. 15 Jul to Fri. 19 Jul
MOQ : 142
Multiples : 1
142 : USD 0.7493
250 : USD 0.7193
500 : USD 0.6933
1000 : USD 0.6707
2500 : USD 0.6509
5000 : USD 0.6334

7760
Ship by Mon. 15 Jul to Fri. 19 Jul
MOQ : 142
Multiples : 1
142 : USD 0.7493
250 : USD 0.7193
500 : USD 0.6933
1000 : USD 0.6707
2500 : USD 0.6509
5000 : USD 0.6334

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Factory Pack Quantity :
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the EM6J1T2R from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EM6J1T2R and other electronic components in the MOSFET category and beyond.

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EM6J1 Datasheet Pch+Pch -20V -200mA Small Signal MOSFET llOutline SOT-563 V -20V DSS SC-107C R (Max.) 1.2 DS(on) EMT6 I 200mA D P 150mW D llFeatures llInner circuit 1) Two Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low voltage drive(1.2V drive). 4) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 200 mA D *1 I Pulsed drain current 800 mA DP Gate - Source voltage V 10 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 EM6J1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -200mA - 0.8 1.2 GS D V = -2.5V, I = -100mA - 1.0 1.5 GS D Static drain - source *3 R V = -1.8V, I = -100mA - 1.3 2.2 DS(on) GS D on - state resistance V = -1.5V, I = -40mA - 1.6 3.5 GS D V = -1.2V, I = -10mA - 2.4 9.6 GS D Forward Transfer *3 Y V = -10V, I = -200mA 200 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160624 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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