X-On Electronics has gained recognition as a prominent supplier of EM6J1T2R MOSFETs across the USA, India, Europe, Australia, and various other global locations. EM6J1T2R MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

EM6J1T2R ROHM

EM6J1T2R electronic component of ROHM
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See Product Specifications
Part No.EM6J1T2R
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6
Datasheet: EM6J1T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.539 ea
Line Total: USD 0.54 
Availability - 127152
Ship by Fri. 06 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
127152
Ship by Fri. 06 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.539
10 : USD 0.3553
100 : USD 0.2365
500 : USD 0.1892
1000 : USD 0.1595
8000 : USD 0.1364
24000 : USD 0.1353

4083
Ship by Tue. 10 Dec to Mon. 16 Dec
MOQ : 67
Multiples : 1
67 : USD 0.6078
100 : USD 0.4242
200 : USD 0.3868
500 : USD 0.3315
1000 : USD 0.3137
2000 : USD 0.2942

7536
Ship by Tue. 10 Dec to Mon. 16 Dec
MOQ : 197
Multiples : 1
197 : USD 0.5392
250 : USD 0.5175
500 : USD 0.499
1000 : USD 0.4826
2500 : USD 0.4684
5000 : USD 0.4558

7760
Ship by Tue. 10 Dec to Mon. 16 Dec
MOQ : 439
Multiples : 1
439 : USD 0.2323
500 : USD 0.2238
1000 : USD 0.2166
2500 : USD 0.2102
5000 : USD 0.2046

7760
Ship by Tue. 10 Dec to Mon. 16 Dec
MOQ : 197
Multiples : 1
197 : USD 0.5392
250 : USD 0.5175
500 : USD 0.499
1000 : USD 0.4826
2500 : USD 0.4684
5000 : USD 0.4558

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Factory Pack Quantity :
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the EM6J1T2R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EM6J1T2R and other electronic components in the MOSFETs category and beyond.

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EM6J1 Datasheet Pch+Pch -20V -200mA Small Signal MOSFET llOutline SOT-563 V -20V DSS SC-107C R (Max.) 1.2 DS(on) EMT6 I 200mA D P 150mW D llFeatures llInner circuit 1) Two Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low voltage drive(1.2V drive). 4) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 200 mA D *1 I Pulsed drain current 800 mA DP Gate - Source voltage V 10 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 EM6J1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -200mA - 0.8 1.2 GS D V = -2.5V, I = -100mA - 1.0 1.5 GS D Static drain - source *3 R V = -1.8V, I = -100mA - 1.3 2.2 DS(on) GS D on - state resistance V = -1.5V, I = -40mA - 1.6 3.5 GS D V = -1.2V, I = -10mA - 2.4 9.6 GS D Forward Transfer *3 Y V = -10V, I = -200mA 200 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160624 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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