Product Information

EM6J1T2R

EM6J1T2R electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

243: USD 0.1667 ea
Line Total: USD 40.51

4180 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 243  Multiples: 1
Pack Size: 1
Availability Price Quantity
231660 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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EM6J1T2R
ROHM

1 : USD 0.3979
10 : USD 0.3485
100 : USD 0.2449
500 : USD 0.1978
1000 : USD 0.1507
8000 : USD 0.1368
24000 : USD 0.1357
48000 : USD 0.1323

4180 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 243
Multiples : 1

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EM6J1T2R
ROHM

243 : USD 0.1667
500 : USD 0.1429
1000 : USD 0.1349
2000 : USD 0.123
8000 : USD 0.1228

7566 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 142
Multiples : 1

Stock Image

EM6J1T2R
ROHM

142 : USD 0.6707
250 : USD 0.6509
500 : USD 0.6334
1000 : USD 0.6207

7760 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 142
Multiples : 1

Stock Image

EM6J1T2R
ROHM

142 : USD 0.6707
250 : USD 0.6509
500 : USD 0.6334
1000 : USD 0.6207

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Factory Pack Quantity :
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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EM6J1 Datasheet Pch+Pch -20V -200mA Small Signal MOSFET llOutline SOT-563 V -20V DSS SC-107C R (Max.) 1.2 DS(on) EMT6 I 200mA D P 150mW D llFeatures llInner circuit 1) Two Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low voltage drive(1.2V drive). 4) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 200 mA D *1 I Pulsed drain current 800 mA DP Gate - Source voltage V 10 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 EM6J1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -200mA - 0.8 1.2 GS D V = -2.5V, I = -100mA - 1.0 1.5 GS D Static drain - source *3 R V = -1.8V, I = -100mA - 1.3 2.2 DS(on) GS D on - state resistance V = -1.5V, I = -40mA - 1.6 3.5 GS D V = -1.2V, I = -10mA - 2.4 9.6 GS D Forward Transfer *3 Y V = -10V, I = -200mA 200 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160624 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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