Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R FG6943010R Silicon N-channel MOSFET(FET1) Unit : mm Silicon P-channel MOSFET(FET2) 1.6 0.2 0.13 6 5 4 For switching Features 12 3 Low drive voltage: 2.5 V drive (0.6) Halogen-free / RoHS compliant (0.5)(0.5) (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1.0 Marking Symbol V7 1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) 3. Drain(FET2) 6. Drain(FET1) Basic Part Number FJ330301 + FK330301 (Individual) SSMini6-F3-B Panasonic JEITA SC-107C Packaging Code SOT-666 Embossed type (Thermo-compression sealing) 8 000 pcs / reel (standard) Internal Connection (D1) (G2) (S2) 6 5 4 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit FET1 Drain-source voltage VDS 30 V Gate-source voltage VGS 12 V FET1 Drain current ID 100 mA FET2 Pulse drain current IDp 200 mA Drain-source voltage VDS -30 V Gate-source voltage VGS 12 V 1 2 3 FET2 (S1) (G1) (D2) Drain current ID -100 mA Pulse drain current IDp -200 mA Pin name Total power dissipation PT 125 mW Channel temperature Tch 150 C 1. Source(FET1) 4. Source(FET2) Overall Operating ambient temperature Topr -40 to + 85 C 2. Gate(FET1) 5. Gate(FET2) Storage temperature Tstg -55 to +150 C 3. Drain(FET2) 6. Drain(FET1) Page 1 of 8 Established : 2010-06-30 Revised : 2013-10-10 1.2 1.6Doc No. TT4-EA-12659 Revision. 2 Product Standards MOS FET FG6943010R Electrical Characteristics Ta = 25 C 3C FET1 Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 30 V Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH ID = 1.0 A, VDS = 3.0 V 0.5 1.0 1.5 V RDS(on)1 ID = 10 mA, VGS = 2.5 V 36 Drain-source ON resistance RDS(on)2 ID = 10 mA, VGS = 4.0 V 2 3 Forward transfer admittance Yfs ID = 10 mA, VDS = 3.0 V2055 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = 3 V, VGS = 0 to 3 V *1 ton 100 ns Turn-on time ID = 10 mA VDD = 3 V, VGS = 3 to 0 V *1 toff 100 ns Turn-off time ID = 10 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 FET1 Turn-on and Turn-off test circuit VVDD=DD= 33VV IDID=10mA=10mA RL=30RL=3000 DD VoVoutut VinVin VGS=VGS=03V03V GG 5050 SS Page 2of 8 Established : 2010-06-30 Revised : 2013-10-10