X-On Electronics has gained recognition as a prominent supplier of FJ3303010L MOSFETs across the USA, India, Europe, Australia, and various other global locations. FJ3303010L MOSFETs are a product manufactured by Panasonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FJ3303010L Panasonic

FJ3303010L electronic component of Panasonic
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See Product Specifications
Part No.FJ3303010L
Manufacturer: Panasonic
Category: MOSFETs
Description: MOSFET SM SIG MOS FET FLT LD 1.2x1.2mm
Datasheet: FJ3303010L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.0579
10 : USD 0.0549
100 : USD 0.0541
N/A

Obsolete
0
MOQ : 10000
Multiples : 10000
10000 : USD 0.0508
20000 : USD 0.0508
30000 : USD 0.0508
40000 : USD 0.0508
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.935
10 : USD 0.7186
100 : USD 0.1624
500 : USD 0.1079
1000 : USD 0.0833
2500 : USD 0.0652
10000 : USD 0.0566
20000 : USD 0.0534
50000 : USD 0.0481
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Rds On
Factory Pack Quantity :
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FJ3303010L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FJ3303010L and other electronic components in the MOSFETs category and beyond.

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Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching 1. 2 FJ350301 in SSSMini3 type package 0.3 0.13 3 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 Marking Symbol : U1 0.2 0.52 (0 .4 ) (0.4) Packaging 0. 8 Embossed type (Thermo-compression sealing) :10 000 pcs / reel (standard) 1. Gate 2. Source Drain 3. Absolute Maximum Ratings Ta = 25 C Panasonic SSSMini3-F2-B JEITA SC-105AA Parameter Symbol Rating Unit Drain-source voltage VDS -30 V Code SOT-723 Gate-source voltage VGS 12 V Drain current ID -100 mA Pulse drain current IDp -200 mA Internal Connection Total power dissipation PD 100 mW (D) 3 Channel temperature Tch 150 Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 1 2 (G) (S) Pin Name 1. Gate 2. Source Drain 3. Page15of Established : 2010-06-25 Revised : 2013-10-10 0.8 1.2Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = -1 mA, VGS = 0 -30 V Drain-source cutoff current IDSS VDS = -30 V, VGS = 0 -1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH -0.5 -1.0 -1.5 V ID = -1.0 A, VDS = -3.0 V RDS(on)1 ID = -10 mA, VGS = -2.5 V 7 17 Drain-source ON resistance RDS(on)2 ID = -10 mA, VGS = -4.0 V 4 7 Forward transfer admittance |Yfs| ID = -10 mA, VDS = -3.0 V 20 40 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = -3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = -3 V, VGS = 0 to -3 V *1 ton 100 ns Turn-on time ID = -10 mA VDD = -3 V, VGS = -3 to 0 V *1 toff 100 ns Turn-off time ID = -10 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit VVDD=DD=-- 33VV 10 % IDID== -10m-10m AA RRLL=30=30 00 Vin 90 % DD VoVouutt ViVinn VGVGS=0S=0 -3V-3V GG 90 % 5050 Vout 10 % SS t(on) t(off) Page 2of 5 Established : 2010-06-25 Revised : 2013-10-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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