DATA SHEET www.onsemi.com MOSFET N-Channel, V R MAX I MAX DSS DS(ON) D POWERTRENCH 80 V 7.5 m 10 V 65 A 80 V, 65 A, 7.5 m ELECTRICAL CONNECTION FDWS86369-F085 Features Typ R = 5.9 m at V = 10 V I = 65 A DS(on) GS D Typ Q = 35 nC at V = 10 V I = 65 A g(tot) GS D UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI) AECQ101 Qualified NChannel MOSFET These Devices are PbFree and are RoHS Compliant Top Bottom Applications D D D Automotive Engine Control D PowerTrain Management G S Solenoid and Motor Drivers S S Integrated Starter/Alternator Pin 1 Primary Switch for 12 V Systems DFNW8 CASE 507AU MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) J MARKING DIAGRAM Symbol Parameter Ratings Unit V Drain to Source Voltage 80 V DSS V Gate to Source Voltage 20 V GS I Drain Current (T = 25C) A D C ON AYWWWL Continuous (V = 10 V) (Note 1) 65 GS FDWS Pulsed (see Fig. 141) 86369 E Single Pulse Avalanche Energy 27 mJ AS (Note 2) P Power Dissipation 107 W A = Assembly Location D Derate above 25C 0.71 W/C Y = Year WW = Work Week T , T Operating and Storage Temperature 55 to +175 C J STG WL = Assembly Lot FDWS = Device Code R Thermal Resistance 1.4 C/W JC (Junction to case) 86369 = Device Code R Maximum Thermal Resistance 50 C/W JA (Note: Microdot may be in either location) (Junction to Ambient) (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. Device Package Shipping 2. Starting Tj = 25C, L = 20 H, I = 52 A, V = 80 V during inductor charging AS DD and V = 0 V during time in avalanche. DD FDWS86369F085 DFNW8 3000 / 3. R is the sum of the junction to case and case to ambient thermal JA (Power56) Tape & Reel resistance where the case thermal reference is defined as the solder (PbFree) mounting surface of the drain pins. R is guaranteed by design while R JC JA is determined by the users board design. The maximum rating presented For information on tape and reel specifications, 2 here is based on mounting on a 1 in pad of 2 oz copper. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2021 Rev. 3 FDWS86369F085/DFDWS86369F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 80 V VDSS D GS I DraintoSource Leakage Current V = 80 V, V = 0 V, T = 25C 1 A DSS DS GS J V = 80 V, V = 0 V, T = 175C (Note 4) 1 mA DS GS J I GatetoSource Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2.0 3.0 4.0 V GS(th) GS DS D R Drain to Source OnResistance I = 65 A, V = 10 V, T = 25C 5.9 7.5 m DS(on) D GS J I = 65 A, V = 10 V, T = 175C (Note 4) 12.2 15.5 D GS J DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, f = 1 MHz 2470 pF iss DS GS C Output Capacitance 400 oss C Reverse Transfer Capacitance 14 rss R Gate Resistance f = 1 MHz 1.8 g Q Total Gate Charge V = 0 V to 10 V V = 64 V, I = 65 A 35 46 nC g(ToT) GS DD D Q Threshold Gate Charge V = 0 V to 2 V 4.5 g(th) GS Q GatetoSource Gate Charge 12.5 gs Q GatetoDrain Miller Charge 8 gd SWITCHING CHARACTERISTICS V = 40 V, I = 65 A, ns t TurnOn Time 39 on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 15 d(on) t Rise Time 11 r t TurnOff Delay 24 d(off) t Fall Time 8 f t TurnOff Time 48 off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 65 A, V = 0 V 1.4 V SD SD GS I = 32.5 A, V = 0 V 1.2 SD GS T ReverseRecovery Time I = 65 A, I / t = 100 A/ s, V = 64 V 49 74 ns rr F SD DD Q ReverseRecovery Charge 44 68 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production J www.onsemi.com 2