DATA SHEET www.onsemi.com MOSFET P-Channel, Logic V R MAX I MAX DSS DS(ON) D Level, POWERTRENCH 40 V 13.5 m 10 V 50 A -40 V, -50 A, 13.5 m D (5,6,7,8) FDWS9510L-F085 Features Typ R = 11 m at V = 10 V I = 50 A DS(on) GS D G (4) Typ Q = 28 nC at V = 10 V I = 50 A g(tot) GS D UIS Capability S (1,2,3) Wettable Flanks for Automatic Optical Inspection (AOI) PChannel MOSFET AECQ101 Qualified These Devices are PbFree and are RoHS Compliant Top Bottom Applications D D D D Automotive Engine Control Powertrain Management G S Solenoid and Motor Drivers S S Electronic Steering Pin 1 DFNW8 Integrated Starter/Alternator CASE 507AU Distributed Power Architectures and VRM Primary Switch for 12 V Systems MARKING DIAGRAM MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS ON AYWWWL GatetoSource Voltage V 16 V GS FDWS Continuous Drain Current T = 25C I 50 A 9510L C D (V = 10 V) (Note 1) GS Pulsed Drain Current T = 25C See C Figure 4 A = Assembly Location Single Pulse Avalanche Energy (Note 2) E 32 mJ AS Y = Year P Power Dissipation 75 W D WW = Work Week WL = Assembly Lot Derate above 25C 0.5 W/C FDWS = Device Code Operating and Storage Temperature T , T 55 to C 9510L = Device Code J STG +175 (Note: Microdot may be in either location) Thermal Resistance (JunctiontoCase) R 2 C/W JC Maximum Thermal Resistance R 50 C/W JA (JunctiontoAmbient) (Note 3) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. FDWS9510LF085 DFNW8 3000 / 1. Current is limited by wirebond configuration (Power56) Tape & Reel 2. Starting Tj = 25C, L = 40 H, I = 40 A, V = 40 V during inductor AS DD (PbFree) charging and V = 0 V during time in avalanche DD 3. R is the sum of the junction to case and case to ambient thermal JA For information on tape and reel specifications, resistance where the case thermal reference is defined as the solder including part orientation and tape sizes, please mounting surface of the drain pins. R is guaranteed by design while R JC JA refer to our Tape and Reel Packaging Specification is determined by the users board design. The maximum rating presented Brochure, BRD8011/D. 2 here is based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: October, 2021 Rev. 2 FDWS9510LF085/DFDWS9510L F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 40 V VDSS D GS I DraintoSource Leakage Current V = 40 V, T = 25C 1 A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 16 V 100 nA GSS GS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 1 1.8 3 V GS(th) GS DS D R DraintoSource OnResistance I = 25 A, V = 4.5 V 18 23 m DS(on) D GS I = 50 A T = 25C 11 13.5 m D J V = 10 V GS T = 175C (Note 4) 18.8 23 J DYNAMIC CHARACTERISTICS C Input Capacitance V = 20 V, V = 0 V, f = 1 MHz 2320 pF iss DS GS C Output Capacitance 811 oss C Reverse Transfer Capacitance 38 rss R Gate Resistance V = 0.5 V, f = 1 MHz 23 g GS Q Total Gate Charge V = 0 to 10 V 28 37 nC g(tot) GS Q Threshold Gate Charge V = 0 to 1 V 4 g(th) GS Q GatetoSource Gate Charge V = 20 V, 7 DD gs I = 50 A D Q GatetoDrain Miller Charge 4 gd SWITCHING CHARACTERISTICS t TurnOn Time V = 20 V, I = 50 A, 20 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay Time 10 d(on) t TurnOn Rise Time 4 r t TurnOff Delay Time 110 d(off) t TurnOff Fall Time 37 f t TurnOff Time 222 off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 50 A, V = 0 V 1 1.25 V SD SD GS I = 25 A, V = 0 V 0.9 1.2 SD GS T Reverse Recovery Time I = 50 A, dI /dt = 100 A/ s 44 62 ns rr F SD Q Reverse Recovery Charge 31 47 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production J www.onsemi.com 2