X-On Electronics has gained recognition as a prominent supplier of FCU360N65S3R0 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCU360N65S3R0 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCU360N65S3R0 ON Semiconductor

FCU360N65S3R0 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FCU360N65S3R0
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SUPERFET3 650V 10A 360 mOhm
Datasheet: FCU360N65S3R0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.764 ea
Line Total: USD 0.76 
Availability - 72
Ship by Fri. 18 Oct to Thu. 24 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
72
Ship by Fri. 18 Oct to Thu. 24 Oct
MOQ : 1
Multiples : 1
1 : USD 0.764

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FCU360N65S3R0 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCU360N65S3R0 and other electronic components in the MOSFETs category and beyond.

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FCU360N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 360 m 10 V 10 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various D power systems for miniaturization and higher efficiency. Features 700 V T = 150C J G Typ. R = 310 m DS(on) Ultra Low Gate Charge (Typ. Q = 18 nC) g S Low Effective Output Capacitance (Typ. C = 173 pF) oss(eff.) N-Channel MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications G D Computing / Display Power Supplies S Telecom / Server Power Supplies IPAK CASE 369AP Industrial Power Supplies Lighting / Charger / Adapter MARKING DIAGRAM Y&Z&3&K FCU360 N65S3R0 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCU360N65S3R0 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 3 FCU360N65S3R0/DFCU360N65S3R0 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 10 A D C Continuous (T = 100C) 6 C I Drain Current Pulsed (Note 1) 25 A DM E Single Pulsed Avalanche Energy (Note 2) 40 mJ AS I Avalanche Current (Note 1) 2.1 A AS E Repetitive Avalanche Energy (Note 1) 0.83 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 83 W D C Derate Above 25C 0.67 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 2.1 A, R = 25 , starting T = 25C. AS G J 3. I 5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 1.5 C/W JC R Thermal Resistance, Junction to Ambient, Max. 100 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCU360N65S3R0 FCU360N65S3R0 IPAK Tube N/A N/A 75 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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