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FCD5N60 / FCU5N60 N-Channel SuperFET MOSFET August 2014 FCD5N60 / FCU5N60 N-Channel SuperFET MOSFET 600 V, 4.6 A, 950 m Features Description 650 V T = 150C SuperFET MOSFET is Fairchild Semiconductors first genera- J tion of high voltage super-junction (SJ) MOSFET family that is Typ. R = 810 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 16 nC) g resistance and lower gate charge performance. This technology Low Effective Output Capacitance (Typ. C = 32 pF) oss(eff.) is tailored to minimize conduction loss, provide superior switch- 100% Avalanche Tested ing performance, dv/dt rate and higher avalanche energy. Con- RoHS Compliant sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD Application TV power, ATX power and industrial power applications. LCD/LED TV and Monitor Lighting Solar Inverter AC-DC Power Supply D D G S I-PAK D-PAK G G D S o S MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FCD5N60TM Symbol Parameter FCD5N60TM WS Unit FCU5N60TU V Drain to Source Voltage 600 V DSS o - Continuous (T = 25 C) 4.6 C I Drain Current A D o - Continuous (T = 100 C) 2.9 C I Drain Current - Pulsed (Note 1) 13.8 A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 159 mJ AS I Avalanche Current (Note 1) 4.6 A AR E Repetitive Avalanche Energy (Note 1) 5.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 54 W C P Power Dissipation D o o - Derate Above 25C0.43W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics FCD5N60TM Symbol Parameter Unit FCD5N60TM WS FCU5N60TU R Thermal Resistance, Junction to Case, Max. 2.3 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 83 JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCD5N60 / FCU5N60 Rev. C2