MOSFET N-Channel, UniFET 500 V, 48 A, 105 m FDH50N50, FDA50N50 Description UniFET MOSFET is ON Semiconductors high voltage MOSFET www.onsemi.com family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce onstate resistance, and to provide better switching performance and higher avalanche energy strength. This V R MAX I MAX DS DS(ON) D device family is suitable for switching power converter applications 500 V 105 m 10 V 48 A such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D Features R = 89 m (Typ.) V = 10 V, I = 24 A DS(on) GS D Low Gate Charge (Typ. 105 nC) G Low C (Typ. 45 pF) rss 100% Avalanche Tested S Improved dv/dt Capability N-CHANNEL MOSFET These Devices are PbFree and are RoHS Compliant Applications Lighting Uninterruptible Power Supply ACDC Power Supply G G D D S S TO2473LD TO3PN CASE 340CK CASE 340BZ MARKING DIAGRAM Y&Z&3&K Y&Z&3&K FDH FDA 50N50 50N50 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDH50N50, FDA50N50 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: December, 2019 Rev. 4 FDH50N50/DFDH50N50, FDA50N50 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FDH50N50F133/ Unit FDA50N50 V Drain to Source Voltage 500 V DSS I Drain Current Continuous (T = 25C) 48 A D C 30.8 A Continuous (T = 100C) C I Drain Current Pulsed (Note 1) 192 A DM V GateSource Voltage 20 V GSS E Single Pulsed Avalanche Energy (Note 2) 1868 mJ AS I Avalanche Current (Note 1) 48 A AR E Repetitive Avalanche Energy (Note 1) 62.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns P Power Dissipation (T = 25C) 625 W D C Derate Above 25C 5 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L = 1.46 mH, I = 48 A, V = 50 V, R = 25 , Starting T = 25 C. AS DD G J 3. I 48 A, di/dt 200 A/ s, V BV , Starting T = 25 C. SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FDH50N50F133 FDH50N50 TO2473 Tube N/A N/A 30 Units FDA50N50 FDA50N50 TO3PN Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FDH50N50F133/ Unit FDA50N50 R Thermal Resistance, Junction to Case, Max. 0.2 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2