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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDB12N50TM N-Channel UniFET MOSFET November 2013 FDB12N50TM TM N-Channel UniFET MOSFET 500 V, 11.5 A, 650 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 550 m (Typ.) V = 10 V, I = 6 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 22 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 12 pF) provide better switching performance and higher avalanche energy strength. This device family is suitable for switching 100% Avalanche Tested power converter applications such as power factor correction RoHS Compliant (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D D G G 2 S D -PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB12N50TM Unit Drain to Source Voltage 500 V V DSS Gate to Source Voltage 30 V V GSS o - Continuous (T = 25 C) 11.5 C I Drain Current A D o = 100 C) 6.9 - Continuous (T C Drain Current - Pulsed (Note 1) 46 A I DM Single Pulsed Avalanche Energy (Note 2) 456 mJ E AS Avalanche Current (Note 1) 11.5 A I AR Repetitive Avalanche Energy (Note 1) 16.7 mJ E AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 165 W C Power Dissipation P D o o C1.33W/ C - Derate above 25 o , T Operating and Storage Temperature Range -55 to +150 C T J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDB12N50TM Unit R Thermal Resistance, Junction to Case, Max 0.75 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB12N50TM Rev. C1