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V = 10 V, I = 10 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 50 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 27 pF) rss provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. The body diodes reverse recovery perfor- Improve dv/dt Capability mance of UniFET FRFET MOSFET has been enhanced by RoHS Compliant lifetime control. Its t is less than 100nsec and the reverse dv/dt rr immunity is 15V/ns while normal planar MOSFETs have over Qualified according to JEDEC Standards JESD22-A113F and 200nsec and 4.5V/nsec respectively. Therefore, it can remove IPC/JEDEC J-STD-020D.1 additional component and improve system reliability in certain applications in which the performance of MOSFETs body diode Applications is significant. This device family is suitable for switching power LCD/LED/PDP TV converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- Lighting lasts. Uninterruptible Power Supply AC-DC Power Supply D D G G 2 S D -PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB20N50F Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 20 C I Drain Current A D o - Continuous (T = 100 C) 12.9 C I Drain Current - Pulsed (Note 1) 80 A DM E Single Pulsed Avalanche Energy (Note 2) 1110 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 250 W C P Power Dissipation D o o - Derate Above 25C2.0W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDB20N50F Unit R Thermal Resistance, Junction to Case, Max. 0.5 JC o R Thermal Resistance, Case to Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB20N50F Rev. C3