X-On Electronics has gained recognition as a prominent supplier of FDB2532_F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB2532_F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDB2532_F085 ON Semiconductor

FDB2532_F085 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDB2532_F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET 150V N-Channel PowerTrench MOSFET
Datasheet: FDB2532_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 5.0358
500 : USD 3.3374
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Obsolete
0
MOQ : 800
Multiples : 800
800 : USD 5.9406
N/A

Obsolete
0
MOQ : 800
Multiples : 800
800 : USD 3.7345
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the FDB2532_F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB2532_F085 and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, POWERTRENCH 150 V, 79 A, 16 m FDB2532-F085 Features www.onsemi.com R = 14 m (Typ.), V = 10 V, I = 33 A DS(ON) GS D Q (tot) = 82 nC (Typ.), V = 10 V g GS D Low Miller Charge Low Q Body Diode RR UIS Capability (Single Pulse and Repetitive Pulse) G AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant S Applications DC/DC converters and OffLine UPS D2PAK3 Distributed Power Architectures and VRMs CASE 418AJ Primary Switch for 24 V and 48 V Systems DRAIN (FLANGE) High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42 V Automotive Load Control GATE Electronic Valve Train Systems SOURCE Synchronous Rectification MARKING DIAGRAM Y&Z&3&K FDB2532 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDB2532 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: May, 2020 Rev. 2 FDB2532F085/DFDB2532 F085 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 150 V DSS V Gate to Source Voltage 20 V GS I Drain Current A Continuous (T = 25C, V = 10 V) 79 D C GS Continuous (T = 100C, V = 10 V) 56 C GS Continuous (T = 25C, V = 10 V, 8 A amb GS R = 43C/W) JA I Drain Current Pulsed Figure 4 A D E Single Pulse Avalanche Energy (Note 1) 400 mJ AS P Power Dissipation (T = 25C) 310 W D C Derate Above 25C 2.07 W/C T , T Operating and Storage Temperature 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C, L = 0.5 mH, I = 40 A J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance Junction to Case 0.48 C/W JC 2 R Thermal Resistance Junction to Ambient, 1in Copper Pad Area 43 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 2 FDB2532 FDB2532F085 TO263 (D PAK3) 330 mm 24 mm 800 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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