X-On Electronics has gained recognition as a prominent supplier of FDB3632 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDB3632 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDB3632 ON Semiconductor

FDB3632 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDB3632
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Datasheet: FDB3632 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.725 ea
Line Total: USD 1380 
Availability - 776
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
776
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 800
Multiples : 800
800 : USD 1.725
1600 : USD 1.7
3200 : USD 1.675
6400 : USD 1.65

26384
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 800
Multiples : 800
800 : USD 1.781
1600 : USD 1.781
2400 : USD 1.781
3200 : USD 1.781

776
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 800
Multiples : 800
800 : USD 2.3322
1600 : USD 2.2984
3200 : USD 2.2646
6400 : USD 2.2308

776
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 203
Multiples : 1
203 : USD 2.405
500 : USD 2.2912
1000 : USD 2.1613

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDB3632 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDB3632 and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, N-Channel, POWERTRENCH 100 V, 80 A, 9 m FDH3632, FDP3632, FDB3632 www.onsemi.com Features R = 7.5 m (Typ.), V = 10 V, I = 80 A DS(ON) GS D Q (tot) = 84 nC (Typ.), V = 10 V g GS V R MAX I MAX DSS DS(ON) D Low Miller Charge 100 V 9 m 80 A Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) D These Devices are PbFree and are RoHS Compliant Applications G Synchronous Rectification Battery Protection Circuit S Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter TO2473 CASE 340CK G D S TO2203 CASE 340AT G D S D2PAK3 CASE 418AJ MARKING DIAGRAM Y&Z&3&K FDX3632 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDX3632 = Specific Device Code X = H/P/B ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2020 Rev. 5 FDP3632/DFDH3632, FDP3632, FDB3632 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GS I Drain Current A Continuous (T < 111C, V = 10 V) 80 D C GS Continuous (T = 25C, V = 10 V, 12 amb GS R = 43C/W) JA I Drain Current Pulsed Figure 4 A D E Single Pulse Avalanche Energy (Note 1) 337 mJ AS P Power Dissipation (T = 25C) 310 W D C Derate Above 25C 2.07 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C, L = 0.12mH, I = 75 A, V = 80 V. J AS DD THERMAL CHARACTERISTICS Symbol Parameter Value Unit 2 R Thermal Resistance, Junction to Case, Max. TO220, D PAK, TO247 0.48 C/W JC R Thermal Resistance, Junction to Ambient, Max. TO220 (Note 2) 62 C/W JA 2 2 R Thermal Resistance, Junction to Ambient, D PAK, Max. 1 in copper pad area 43 C/W JA R Thermal Resistance, Junction to Ambient, Max. TO247 (Note 2) 30 C/W JA 2. Pulse Width = 100 s PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 2 FDB3632 FDB3632 D PAK 330 mm 24 mm 800 Units FDP3632 FDP3632 TO220 Tube N/A 50 Units FDH3632 FDH3632 TO247 Tube N/A 30 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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