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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM TM FDB38N30U N-Channel UniFET Ultra FRFET MOSFET November 2013 FDB38N30U TM TM N-Channel UniFET Ultra FRFET MOSFET 300 V, 38 A, 120 m Features Description TM R = 120 m (Max.) V = 10 V, I = 19 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 56 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche Low C (Typ. 55 pF) rss TM energy strength. UniFET Ultra FRFET MOSFET has much 100% Avalanche Tested superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while RoHS Compliant normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can Applications remove additional component and improve system reliability in Uninterruptible Power Supply certain applications that require performance improvement of the MOSFETs body diode. This device family is suitable for LCD/LED/PDP TV switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and AC-DC Power Supply electronic lamp ballasts. D D G G 2 S D -PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB38N30U Unit V Drain to Source Voltage 300 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 38 C I Drain Current A D o - Continuous (T = 100 C) 22.8 C I Drain Current - Pulsed (Note 1) 152 A DM E Single Pulsed Avalanche Energy (Note 2) 722 mJ AS I Avalanche Current (Note 1) 38 A AR E Repetitive Avalanche Energy (Note 1) 31.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 313 W C P Power Dissipation D o o - Derate Above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDB38N30U Unit R Thermal Resistance, Junction to Case, Max. 0.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB38N30U Rev. C1