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V = 10 V, I = 27 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance. Low Gate Charge, Q = 14.3 nC (Typ.) G High Performance Trench Technology for Extremely Low Applications R DS(on) Consumer Appliances High Power and Current Handling Capability LED TV RoHS Compliant Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D D G G 2 S D -PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB390N15A Unit V Drain to Source Voltage 150 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C,Silicon Limited) 27 C I Drain Current A D o - Continuous (T = 100 C,Silicon Limited) 19 C I Drain Current - Pulsed (Note 1) 108 A DM E Single Pulsed Avalanche Energy (Note 2) 78 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 75 W C P Power Dissipation D o o - Derate Above 25C0.5W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds. 300 C L Thermal Characteristics Symbol Parameter Unit FDB390N15A R Thermal Resistance, Junction to Case, Max. 2.0 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max. 40 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB390N15A Rev. 1.8