FDB3632 F085 March 2012 FDB3632 F085 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications r = 7.5m (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 84nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection Systems Qualified to AEC Q101 RoHS Compliant 42V Automotive Load Control Electronic Valve Train Systems D DRAIN (FLANGE) GATE G SOURCE TO-263AB S FDB SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GS Drain Current o 80 A Continuous (T < 111 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 12 A amb GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 338 mJ AS Power dissipation 310 W P D o o Derate above 25C2.07W/ C o T , T Operating and Storage Temperature -55 to +175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263, TO-262 0.48 C/W JC o R Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62 C/W JA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W JA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: FDB3632 F085 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB3632 FDB3632 F085 TO-263AB 330mm 24mm 800 units Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain to Source Breakdown Voltage I = 250 A, V = 0V 100 - - V VDSS D GS V = 80V - - 1 DS I Zero Gate Voltage Drain Current A DSS o V = 0V T = 150C- - 250 GS C I Gate to Source Leakage Current V = 20V - - 100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A2 - 4 V GS(TH) GS DS D I =80A, V =10V - 0.0075 0.009 D GS r DS(ON) Drain to Source On Resistance o I =80A, V =10V, T =175 C - 0.018 0.022 D GS C Dynamic Characteristics C Input Capacitance -6000 - pF ISS V = 25V, V = 0V, DS GS C Output Capacitance - 820 - pF OSS f = 1MHz C Reverse Transfer Capacitance - 200 - pF RSS Q Total Gate Charge at 10V V = 0V to 10V -84 110 nC g(TOT) GS Q Threshold Gate Charge V = 0V to 2V - 11 14 nC g(TH) GS V = 50V DD Q Gate to Source Gate Charge I = 80A - 30 - nC gs D I = 1.0mA Q Gate Charge Threshold to Plateau g - 20 - nC gs2 Q Gate to Drain Miller Charge - 20 - nC gd Resistive Switching Characteristics (V = 10V) GS t Turn-On Time -- 102 ns ON t Turn-On Delay Time - 30 - ns d(ON) t Rise Time - 39 - ns V = 50V, I = 80A r DD D V = 10V, R = 3.6 t Turn-Off Delay Time - 96 - ns GS GS d(OFF) t Fall Time - 46 - ns f t Turn-Off Time - - 213 ns OFF Drain-Source Diode Characteristics I = 80A - - 1.25 V SD V Source to Drain Diode Voltage SD I = 40A - - 1.0 V SD t Reverse Recovery Time I = 75A, dI /dt= 100A/s- - 64 ns rr SD SD Q Reverse Recovered Charge I = 75A, dI /dt= 100A/ s - - 120 nC RR SD SD Notes: 1: Starting T = 25C, L = 0.12mH, I = 75A. J AS 2: Pulse Width = 100s 2012 Fairchild Semiconductor Corporation FDB3632 F085 Rev. C1